Application of normally-off SiC-JFETs in photovoltaic inverters

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Kranzer, Dirk ^a   Wilhelm, Christian ^a   Reiners, Florian ^a   Burger, Bruno ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Efficiency; Inverter circuit; Normally off JFET; Photovoltaic; Silicon carbide

Indexed keywords

INVERTER CIRCUIT; NORMALLY-OFF JFET; ON-RESISTANCE; PHOTOVOLTAIC INVERTERS; SWITCHING ENERGY;

PHOTOLITHOGRAPHY; POWER ELECTRONICS;

SILICON CARBIDE;

EID: 72949105165     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Burger, B.; Kranzer, D.; Stalter, O.; Efficiency Improvement of PV-Inverters with SiC-DMOSFETs, ICSCRM 2007, Otsu, Japan, 14.-19.October 2007
2. Burger, B.; Kranzer, D.; Stalter, O.; Cost Reduction of PV-Inverters with SiC-DMOSFETs, CIPS, 11-18 March 2008, Nürnberg, Germany
3. D. Kranzer, B. Burger, "Application of Silicon Carbide Transistors in Photovoltaic Inverters", article released in "Silicon Carbide - Current Trends in Research and Applications", October 2009, Editors: P. Friedrich, T. Kimoto, L. Ley, G. Pensl, Wiley-Vch ISBN 978-3-527-40953