Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit

IEEE Transactions on Industry Applications

Volumn 51, Issue 3, 2015, Pages 2415-2422

  Ishibashi, Takaharu ^a,b   Okamoto, Masayuki ^b,c   Hiraki, Eiji ^b,d   Tanaka, Toshihiko ^a,b   Hashizume, Tamotsu ^b,e   Kikuta, Daigo ^b,f   Kachi, Tetsu ^b,f  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UBE NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d OKAYAMA UNIVERSITY   (Japan)

^e HOKKAIDO UNIVERSITY   (Japan)

^f Rd Management Section   (Japan)

Author keywords

Current collapse phenomena; GaN based high electron mobility transistor (GaN HEMT); gate driver; normally on; switching characteristics

Indexed keywords

DC-DC CONVERTERS; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; POWER CONVERTERS; SILICON CARBIDE; TRANSISTORS;

CURRENT COLLAPSE; GAN HEMTS; GATE DRIVERS; NORMALLY ON; SWITCHING CHARACTERISTICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84930224900     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2014.2369818     Document Type: Article

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