A 1200-V, 60-A SiC MOSFET multichip phase-leg module for high-temperature, high-frequency applications

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2307-2320

  Chen, Zheng ^a   Yao, Yiying ^b   Boroyevich, Dushan ^a   Ngo, Khai D T ^a   Mattavelli, Paolo ^a   Rajashekara, Kaushik ^c  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b VIRGINIA STATE UNIVERSITY   (United States)

^c The University of Texas at Dallas   (United States)

Author keywords

Device characteristics; gate oxide stability; high temperature packaging; SiC MOSFET

Indexed keywords

AIRCRAFT APPLICATIONS; DEVICE CHARACTERISTICS; GATE OXIDE; HIGH-FREQUENCY APPLICATIONS; HIGH-TEMPERATURE PACKAGING; SIC MOSFET; SILICON CARBIDE MOSFETS; SWITCHING PERFORMANCE;

COMPUTER SIMULATION; GATES (TRANSISTOR); PACKAGING MATERIALS; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84893039351     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2283245     Document Type: Article

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