Improved modeling of medium voltage SiC MOSFET within wide temperature range

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2229-2237

  Sun, Kai ^a   Wu, Hongfei ^b   Lu, Juejing ^b,c   Xing, Yan ^b   Huang, Lipei ^a  

^a TSINGHUA UNIVERSITY   (China)

^b NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Modeling; MOSFET; silicon carbide; temperature range

Indexed keywords

EXPERIMENTAL TEST; MOS-FET; SILICON CARBIDE MOSFETS; STATIC CHARACTERISTIC; SWITCHING WAVEFORMS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; WIDE TEMPERATURE RANGES;

MODELS; MOSFET DEVICES; RESISTORS; TEMPERATURE;

SILICON CARBIDE;

EID: 84893052904     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2273459     Document Type: Article

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