Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed

ACS Nano

Volumn 9, Issue 8, 2015, Pages 8312-8320

  Lee, Hee Sung ^a   Baik, Seung Su ^a   Lee, Kimoon ^b   Min, Sung Wook ^a   Jeon, Pyo Jin ^a   Kim, Jin Sung ^a   Choi, Kyujin ^a   Choi, Hyoung Joon ^a   Kim, Jae Hoon ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Kunsan National University   (South Korea)

Author keywords

2D nanosheet MoS2; Hall measurement; MESFET; NiOx; Schottky junction; van der Waals interface

Indexed keywords

CARRIER MOBILITY; ENERGY GAP; HYSTERESIS; LAYERED SEMICONDUCTORS; MESFET DEVICES; METAL INSULATOR BOUNDARIES; MIS DEVICES; MOLYBDENUM COMPOUNDS; NANOSHEETS; NICKEL COMPOUNDS; SULFUR COMPOUNDS; THRESHOLD VOLTAGE; TRANSISTORS; VAN DER WAALS FORCES;

2D NANOSHEET MOS2; HALL MEASUREMENTS; MESFET; NIOX; SCHOTTKY JUNCTIONS; VAN DER WAALS;

INTERFACE STATES;

EID: 84940118685     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b02785     Document Type: Article

References (53)

1. Coleman, J. N.; Lotya, M.; O'Neill, A.; Bergin, S. D.; King, P. J.; Khan, U.; Young, K.; Gaucher, A.; De, S.; Smith, R. J. et al. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials Science 2011, 331, 568-571 10.1126/science.1194975
2. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.- J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275 10.1038/nchem.1589
3. 2 ACS Nano 2011, 5, 9934-9938 10.1021/nn203715c
4. 2 Hybrid Technology for Large-Scale Two-Dimensional Electronics Nano Lett. 2014, 14, 3055-3063 10.1021/nl404795z
5. Cheng, R.; Jiang, S.; Chen, Y.; Liu, Y.; Weiss, N.; Cheng, H.-C.; Wu, H.; Huang, Y.; Duan, X. Few-Layer Molybdenum Disulfide Transistors and Circuits for High-Speed Flexible Electronics Nat. Commun. 2014, 5, 5143 10.1038/ncomms6143
6. Roy, T.; Tosun, M.; Kang, J. S.; Sachid, A. B.; Desai, S. B.; Hettick, M.; Hu, C. C.; Javey, A. Field-Effect Transistors Built from All Two-Dimensional Material Components ACS Nano 2014, 8, 6259-6264 10.1021/nn501723y
7. Wang, Q. H.; Kourosh, K. Z.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712 10.1038/nnano.2012.193
8. 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap Nano Lett. 2012, 12, 3695-3700 10.1021/nl301485q
9. 2 Crystals Nat. Commun. 2012, 3, 1011 10.1038/ncomms2018
10. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150 10.1038/nnano.2010.279
11. 3 as Top-Gate Dielectric IEEE Electron Device Lett. 2012, 33, 546-548 10.1109/LED.2012.2184520
12. 2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Nano Lett. 2014, 14, 3594-3601 10.1021/nl501275p
13. Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium Nano Lett. 2013, 13, 1991-1995 10.1021/nl400044m
14. 2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792 10.1021/nl301702r
15. Pospischil, A.; Furchi, M. M.; Mueller, T. Solar-Energy Conversion and Light Emission in an Atomic Monolayer p-n Diode Nat. Nanotechnol. 2014, 9, 257-261 10.1038/nnano.2014.14
16. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable p-n Diodes in A Monolayer Dichalcogenide Nat. Nanotechnol. 2014, 9, 262-267 10.1038/nnano.2014.25
17. 2 p-n Junctions Nat. Nanotechnol. 2014, 9, 268-272 10.1038/nnano.2014.26
18. Pradhan, N. R.; Rhodes, D.; Xin, Y.; Memaran, S.; Bhaskaran, L.; Siddiq, M.; Hill, S.; Ajayan, P. M.; Balicas, L. Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities ACS Nano 2014, 8, 7923-7929 10.1021/nn501693d
19. 2 Transistors and Their Applications in Logic Circuits Adv. Mater. 2014, 26, 3263-3269 10.1002/adma.201305845
20. 2 Using a van der Waals Heterostructure Device Platform Nat. Nanotechnol. 2015, 10, 534-540 10.1038/nnano.2015.70
21. 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures ACS Nano 2013, 7, 7931-7936 10.1021/nn402954e
22. Chen, X.; Wu, Z.; Xu, S.; Wang, L.; Huang, R.; Han, Y.; Ye, W.; Xiong, W.; Han, T.; Long, G. et al. Probing The Electron States and Metal-Insulator Transition Mechanisms in Molybdenum Disulphide Vertical Heterostructures Nat. Commun. 2015, 6, 6088 10.1038/ncomms7088
23. Muller, R. S.; Kamin, T. I.; Chan, M. Device Electronics for Integrated Circuits, 3 rd ed.; Zobrist, B., Ed.; John Wiley & Sons, New York, 2003; Ch. 8.
24. 2 Field-Effect Transistors Adv. Mater. 2014, 26, 6255-6261 10.1002/adma.201402008
25. 2 Nat. Mater. 2013, 12, 815-820 10.1038/nmat3687
26. 2 Nano Lett. 2013, 13, 4212-4216 10.1021/nl401916s
27. 2 Dielectric Property Evidenced by Field-Effect Transistor Performance Nanoscale 2013, 5, 548-551 10.1039/C2NR33443G
28. 2 Field-Effect Transistors: the Effect of High-k Passivation Nanoscale 2014, 6, 433-441 10.1039/C3NR04218A
29. Ma, R. M.; Dai, L.; Qin, G. G. High-Performance Nano-Schottky Diodes and Nano-MESFETs Made on Single CdS Nanobelts Nano Lett. 2007, 7, 868-873 10.1021/nl062329+
30. Frenzel, H.; Lajn, A.; von Wenckstern, H.; Lorenz, M.; Schein, F.; Zhang, Z.; Grundmann, M. Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits Adv. Mater. 2010, 22, 5332-5349 10.1002/adma.201001375
31. Khan, T.; Vasileska, D.; Thornton, T. J. Subthreshold Electron Mobility in SOI MOSFETs and MESFETs IEEE Trans. Electron Devices 2005, 52, 1622-1626 10.1109/TED.2005.850617
32. Lee, H. S.; Lee, K. H.; Chang, Y. G.; Raza, S. R. A.; Im, S.; Kim, D. H.; Kim, H. R.; Lee, G. H. Photogating and Electrical-Gating of Amorphous GaSnZnO-Based Inverter with Light-Transmitting Gate Electrode Appl. Phys. Lett. 2011, 98, 223505 10.1063/1.3598396
33. Lee, K.; Kim, J. H.; Im, S. Probing the Work Function of A Gate Metal with A Top-Gate ZnO-Thin-Film Transistor with A Polymer Dielectric Appl. Phys. Lett. 2006, 88, 023504 10.1063/1.2162668
34. Padovani, F. A.; Stratton, R. Field and Thermionic-Field Emission in Schottky Barriers Solid-State Electron. 1966, 9, 695-707 10.1016/0038-1101(66)90097-9
35. 2 van der Waals Heterojunction Diodes Appl. Phys. Lett. 2013, 102, 242101 10.1063/1.4809815
36. Allen, M. J.; Tung, V. C.; Kaner, R. B. Honeycomb Carbon: A Review of Graphene Chem. Rev. 2010, 110, 132-145 10.1021/cr900070d
37. Leonard, F.; Talin, A. A. Electrical Contacts to One- and Two-Dimensional Nanomaterials Nat. Nanotechnol. 2011, 6, 773-783 10.1038/nnano.2011.196
38. Sze, S. M. Physics of Semiconductor Devices, 2 nd ed.; John Wiley & Sons: New York, 1981; Ch. 7.
39. Muller, R. S.; Kamin, T. I.; Chan, M. Device Electronics for Integrated Circuits, 3 rd ed.; Zobrist, B., Ed.; John Wiley & Sons: New York, 2003; Ch. 4.
40. 2 Phys. Status Solidi B 1977, 79, 713-722 10.1002/pssb.2220790238
41. Fivaz, R.; Mooser, E. Mobility of Charge Carriers in Semiconducting Layer Structures Phys. Rev. 1967, 163, 743-755 10.1103/PhysRev.163.743
42. Grant, A. J.; Griffiths, T. M.; Pitt, G. D.; Yoffe, A. D. The Electrical Properties and The Magnitude of The Indirect Gap in The Semiconducting Transition Metal Dichalcogenide Layer Crystals J. Phys. C: Solid State Phys. 1975, 8, L17-L23 10.1088/0022-3719/8/1/004
43. Lee, K.; Kim, H. Y.; Lotya, M.; Coleman, J. N.; Kim, G. T.; Duesberg, G. S. Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation Adv. Mater. 2011, 23, 4178-4182 10.1002/adma.201101013
44. Sze, S. M. Physics of Semiconductor Devices, 3rd ed.; John Wiley & Sons: New York, 1981; Ch. 1.
45. 2 Thin Flake Transistors Nano Lett. 2012, 12, 1136-1140 10.1021/nl2021575
46. Jena, D.; Konar, A. Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering Phys. Rev. Lett. 2007, 98, 136805 10.1103/PhysRevLett.98.136805
47. Ryu, B.; Lee, Y. T.; Lee, K. H.; Ha, R.; Park, J. H.; Choi, H. J.; Im, S. Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H During Passivation Nano Lett. 2011, 11, 4246-4250 10.1021/nl202239c
48. 2 Field Effect Transistors ACS Nano 2012, 6, 5635-5641 10.1021/nn301572c
49. 2 Nanosheet Field-Effect Transistors by Photo-Excited Charge Collection Spectroscopy Nanoscale 2015, 7, 5617-5623 10.1039/C4NR06707J
50. 2 Phototransistors with Local Bottom-Gate Structures Adv. Mater. 2015, 27, 2126-2230 10.1002/adma.201570087
51. 2 Phototransistors with Spectral Response from Ultraviolet to Infrared Adv. Mater. 2012, 24, 5832-5836 10.1002/adma.201201909
52. 2 Phototransistors ACS Nano 2012, 6, 74-80 10.1021/nn2024557
53. 2 Nat. Nanotechnol. 2013, 8, 497-501 10.1038/nnano.2013.100