Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode

Applied Physics Letters

Volumn 98, Issue 22, 2011, Pages

  Lee, Hee Sung ^a   Lee, Kwang H ^a   Chang, Youn Gyoung ^a   Raza, Syed Raza Ali ^a   Im, Seongil ^a   Kim, Dong Ho ^b   Kim, Hye Ri ^b   Lee, Gun Hwan ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Material Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL INTERFACE; ELECTRICAL GATING; GATE ELECTRODES; SEMI-TRANSPARENT NIO; TOP-GATE; TRAPPED ELECTRONS; VOLTAGE GAIN; VOLTAGE TRANSFER;

ALUMINUM; AMORPHOUS FILMS; ELECTRODES; REFRACTORY METAL COMPOUNDS; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 79958784776     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3598396     Document Type: Article

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