-
3
-
-
0023315186
-
"Self-aligned Si MESFET's fabricated in thin silicon-on-insulator films"
-
D. P. Vu and A. Sono, "Self-aligned Si MESFET's fabricated in thin silicon-on-insulator films," Electron. Lett., vol. 23, pp. 354-355, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 354-355
-
-
Vu, D.P.1
Sono, A.2
-
4
-
-
0024767897
-
"Subthreshold behavior of silicon MESFET's on SOS and bulk silicon substrates"
-
U. Magnusson, J. Tiren, H. Norde, and H. Bleichner, "Subthreshold behavior of silicon MESFET's on SOS and bulk silicon substrates," Solid-State Electron., vol. 32, pp. 931-934, 1989.
-
(1989)
Solid-State Electron.
, vol.32
, pp. 931-934
-
-
Magnusson, U.1
Tiren, J.2
Norde, H.3
Bleichner, H.4
-
5
-
-
0024965807
-
"MESFET's in thin silicon on SIMOX"
-
H. Vogt, G. Burbach, J. Belz, and G. Zimmer, "MESFET's in thin silicon on SIMOX," Electron. Lett., vol. 25, pp. 1580-1581, 1989.
-
(1989)
Electron. Lett.
, vol.25
, pp. 1580-1581
-
-
Vogt, H.1
Burbach, G.2
Belz, J.3
Zimmer, G.4
-
6
-
-
4444331201
-
"High-frequency performance of subthreshold SOI MESFETs"
-
Oct.
-
J. Yang, J. Y. Spann, R. Anderson, and T. J. Thornton, "High-frequency performance of subthreshold SOI MESFETs," IEEE Electron Device Lett., vol. 25, no. 10, pp. 652-654, Oct. 2004.
-
(2004)
IEEE Electron Device Lett.
, vol.25
, Issue.10
, pp. 652-654
-
-
Yang, J.1
Spann, J.Y.2
Anderson, R.3
Thornton, T.J.4
-
7
-
-
0035696689
-
"Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application"
-
Dec.
-
D. Esseni, M. Mastrapasqua, G. K. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, "Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application," IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2842-2850, Dec. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.12
, pp. 2842-2850
-
-
Esseni, D.1
Mastrapasqua, M.2
Celler, G.K.3
Fiegna, C.4
Selmi, L.5
Sangiorgi, E.6
-
8
-
-
0016028465
-
"Carrier mobilities at weakly inverted silicon surfaces"
-
J. T. C. Chen and R. S. Muller, "Carrier mobilities at weakly inverted silicon surfaces," J. Appl. Phys., vol. 45, pp. 828-834, 1974.
-
(1974)
J. Appl. Phys.
, vol.45
, pp. 828-834
-
-
Chen, J.T.C.1
Muller, R.S.2
-
9
-
-
36149023347
-
"Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering"
-
C. Herring and E. Vogt, "Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering," Phys. Rev., vol. 101, pp. 944-961, 1956.
-
(1956)
Phys. Rev.
, vol.101
, pp. 944-961
-
-
Herring, C.1
Vogt, E.2
-
10
-
-
0000962141
-
"First-order optical and intervalley scattering in semiconductors"
-
D. K. Ferry, "First-order optical and intervalley scattering in semiconductors," Phys. Rev. B, vol. 14, pp. 1605-1609, 1976.
-
(1976)
Phys. Rev. B
, vol.14
, pp. 1605-1609
-
-
Ferry, D.K.1
-
11
-
-
0033667041
-
"3D simulations of ultra-small MOSFET's with real-space treatment of the electron-electron and electron-ion interactions"
-
W. J. Gross, D. Vasileska, and D. K. Ferry, "3D simulations of ultra-small MOSFET's with real-space treatment of the electron-electron and electron-ion interactions," VLSI Design, vol. 10, pp. 437-452, 2000.
-
(2000)
VLSI Design
, vol.10
, pp. 437-452
-
-
Gross, W.J.1
Vasileska, D.2
Ferry, D.K.3
-
12
-
-
85032069152
-
"Electronic properties of two-dimensional systems"
-
T. Ando, A. B. Fowler, and F. Stern, "Electronic properties of two-dimensional systems," Rev. Mod. Phys., vol. 54, pp. 437-672, 1982.
-
(1982)
Rev. Mod. Phys.
, vol.54
, pp. 437-672
-
-
Ando, T.1
Fowler, A.B.2
Stern, F.3
-
13
-
-
0031118623
-
"Scaled silicon MOSFET's: Part I - Universal mobility behavior"
-
Apr.
-
D. Vasileska and D. K. Ferry, "Scaled silicon MOSFET's: part I - Universal mobility behavior," IEEE Trans. Electron Devices, vol. 44, no. 4, pp. 577-583, Apr. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, Issue.4
, pp. 577-583
-
-
Vasileska, D.1
Ferry, D.K.2
-
15
-
-
0000805233
-
"Long-range coulomb interactions in small silicon devices. Part I: Performance and reliability"
-
M. V. Fischetti and S. E. Laux, "Long-range coulomb interactions in small silicon devices. Part I: performance and reliability," J. Appl. Phys., vol. 89, pp. 1205-1231, 2001.
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 1205-1231
-
-
Fischetti, M.V.1
Laux, S.E.2
-
18
-
-
0030263242
-
"On particle-mesh coupling in monte carlo semiconductor device simulation"
-
Dec.
-
S. Laux, "On particle-mesh coupling in monte carlo semiconductor device simulation," IEEE Trans. Computer-Aided Design, vol. 15, no. 12, pp. 1266-1277, Dec. 1996.
-
(1996)
IEEE Trans. Computer-Aided Design
, vol.15
, Issue.12
, pp. 1266-1277
-
-
Laux, S.1
-
19
-
-
36849123485
-
"Surface states and barrier height of metal-semiconductor system"
-
A. M. Cowley and S. M. Sze, "Surface states and barrier height of metal-semiconductor system," J. Appl. Phys., vol. 36, pp. 3212-3220, 1965.
-
(1965)
J. Appl. Phys.
, vol.36
, pp. 3212-3220
-
-
Cowley, A.M.1
Sze, S.M.2
|