SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 1, 2014, Pages 433-441

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

(11) Na, Junhong a Joo, Min Kyu a,b Shin, Minju a,b Huh, Junghwan c Kim, Jae Sung a Piao, Mingxing a Jin, Jun Eon a Jang, Ho Kyun a Choi, Hyung Jong a Shim, Joon Hyung a Kim, Gyu Tae a

a Korea University (South Korea)

b IMEP LAHC (France)

c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION CHANNELS; CARRIER NUMBER FLUCTUATION; CURRENT FLUCTUATIONS; HOOGE MOBILITY FLUCTUATIONS; INTERFACE TRAP DENSITY; LOW-FREQUENCY NOISE; MOLYBDENUM DISULFIDE; TRAPPING/DETRAPPING;

ALUMINUM; FIELD EFFECT TRANSISTORS; MULTILAYERS; NANOSTRUCTURED MATERIALS; PASSIVATION;

MOLYBDENUM COMPOUNDS;

EID: 84890243489 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr04218a Document Type: Article

Times cited : (155)

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