Layer number dependence of MoS2 photoconductivity using photocurrent spectral atomic force microscopic imaging

ACS Nano

Volumn 9, Issue 3, 2015, Pages 2843-2855

  Son, Youngwoo ^a   Wang, Qing Hua ^a,f   Paulson, Joel A ^a   Shih, Chih Jen ^a,e   Rajan, Ananth G ^a   Tvrdy, Kevin ^b   Kim, Sojin ^a   Alfeeli, Bassam ^c,d   Braatz, Richard D ^a   Strano, Michael S ^a  

^a USA   (United States)

^b UNIVERSITY OF COLORADO   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d KUWAIT INSTITUTE FOR SCIENTIFIC RESEARCH   (Kuwait)

^e ETH ZURICH   (Switzerland)

^f AZ 85281   (United States)

Author keywords

conductive AFM; layered dichalcogenide; metal MoS2 junction; MoS2; photoconductive AFM; photoconductivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINARY ALLOYS; FOURIER ANALYSIS; LIGHT ABSORPTION; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SUBSTRATES;

CONDUCTIVE AFM; HIGH SPATIAL FREQUENCY; LAYERED DICHALCOGENIDE; MOS2; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONIC PROPERTIES; PHOTOCURRENT RESPONSE; TWO DIMENSIONAL (2 D);

LAYERED SEMICONDUCTORS;

EID: 84925583003     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn506924j     Document Type: Article

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