Tuning on-off current ratio and field-effect mobility in a MoS 2-graphene heterostructure via schottky barrier modulation

ACS Nano

Volumn 8, Issue 6, 2014, Pages 5790-5798

  Shih, Chih Jen ^a   Wang, Qing Hua ^a   Son, Youngwoo ^a   Jin, Zhong ^a   Blankschtein, Daniel ^a   Strano, Michael S ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

field effect mobility; field effect transistor devices; Schottky barrier modulation

Indexed keywords

DIGITAL DEVICES; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MODULATION; MOLYBDENUM COMPOUNDS; MOS DEVICES; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

BIPOLAR CHARACTERISTICS; FIELD-EFFECT MOBILITIES; HIGH CARRIER MOBILITY; NEGATIVE GATE VOLTAGES; ON/OFF CURRENT RATIO; PHOTOEXCITED ELECTRON-HOLE PAIRS; SCHOTTKY BARRIERS; SEMICONDUCTING BEHAVIOR;

GRAPHENE;

EID: 84903470019     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn500676t     Document Type: Article

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