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Advanced Materials

Volumn 25, Issue 25, 2013, Pages 3456-3461

High-gain phototransistors based on a CVD MoS2 monolayer

(6) Zhang, Wenjing a Huang, Jing Kai a Chen, Chang Hsiao a Chang, Yung Huang a Cheng, Yuh Jen b Li, Lain Jong a

a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

Author keywords

ambient air; molybdenum disulfides; photogain; phototransistors

Indexed keywords

AMBIENT AIR; CHEMICAL VAPOR DEPOSITED; HIGH-GAIN; MOLYBDENUM DISULFIDE; PERSISTENT PHOTOCONDUCTIVITY; PHOTOGAIN; PHOTORESPONSIVITY; SHALLOW TRAPS;

MOLYBDENUM COMPOUNDS; MONOLAYERS;

PHOTOTRANSISTORS;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE; SILICON; SILICON DIOXIDE;

AMBIENT AIR; ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; LIGHT; MOLYBDENUM DISULFIDES; PHOTOGAIN; PHOTOTRANSISTORS; SEMICONDUCTOR; VOLATILIZATION;

AMBIENT AIR; MOLYBDENUM DISULFIDES; PHOTOGAIN; PHOTOTRANSISTORS;

DISULFIDES; ELECTRIC CONDUCTIVITY; LIGHT; MOLYBDENUM; SILICON; SILICON DIOXIDE; TRANSISTORS, ELECTRONIC; VOLATILIZATION;

EID: 84879691489 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201301244 Document Type: Article

Times cited : (967)

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