Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments

ACS Nano

Volumn 7, Issue 5, 2013, Pages 3905-3911

  Tsai, Dung Sheng ^a   Liu, Keng Ku ^b   Lien, Der Hsien ^a   Tsai, Meng Lin ^a   Kang, Chen Fang ^a   Lin, Chin An ^a   Li, Lain Jong ^b,c   He, Jr Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

graphene; harsh environment; high temperature detection; MoS2; photodetector

Indexed keywords

HARSH ENVIRONMENT; HIGH TEMPERATURE; HIGH THERMAL STABILITY; LIGHT-WAVE COMMUNICATIONS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MOS2; OPTOELECTRONIC CIRCUITS; WORKING TEMPERATURES;

GRAPHENE; IMAGING TECHNIQUES; NANOSTRUCTURED MATERIALS; PHOTODETECTORS; PHOTONS;

MOLYBDENUM COMPOUNDS;

EID: 84878299030     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn305301b     Document Type: Article

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