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Volumn 81, Issue 20, 2002, Pages 3852-3854

Scaling of nano-Schottky-diodes

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; QUANTUM ELECTRONICS; SEMICONDUCTOR DOPING;

EID: 0037065157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1521251     Document Type: Article
Times cited : (246)

References (15)
  • 13
    • 85008315147 scopus 로고    scopus 로고
    • note
    • s as it influences the Fermi-level position in the semiconductor band gap
  • 15
    • 85008311616 scopus 로고    scopus 로고
    • note
    • The region where the potential lowering due to the Coulomb potential of the dopant exceeds 0.1 eV has a radius of about 1 nm


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.