Competitive device performance of low-temperature and all-solution- processed metal-oxide thin-film transistors

Applied Physics Letters

Volumn 99, Issue 24, 2011, Pages

  Kim, Kyung Min ^a   Kim, Chi Wan ^a   Heo, Jae Seok ^a   Na, Hyungil ^a   Lee, Jung Eun ^a   Park, Chang Bum ^a   Bae, Jong Uk ^a   Kim, Chang Dong ^a   Jun, Myungchul ^a   Hwang, Yong Kee ^a   Meyers, Stephen T ^b   Grenville, Andrew ^b   Keszler, Douglas A ^b  

^a LG Display Co Ltd   (South Korea)

^b Inpria Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; ANNEALING TEMPERATURES; BACKPLANES; CURRENT RATIOS; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; FABRICATION PROCESS; FIELD-EFFECT MOBILITIES; LOW TEMPERATURES; METAL-OXIDE; SOLUTION-PROCESSED; SUBTHRESHOLD;

FLAT PANEL DISPLAYS; GALLIUM; GATE DIELECTRICS; INDIUM; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 83755173305     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665912     Document Type: Article

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