In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

Applied Physics Letters

Volumn 102, Issue 10, 2013, Pages

  Lin, Chun Cheng ^a   Chang, Chia Chiang ^b   Wu, Chin Jyi ^b   Tseng, Zong Liang ^a   Tang, Jian Fu ^a   Chu, Sheng Yuan ^a,b   Chen, Yi Chun ^a   Qi, Xiaoding ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLINE STRUCTURE; PIEZOELECTRIC COEFFICIENT; RADIO FREQUENCY MAGNETRON SPUTTERING METHOD; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; REMNANT POLARIZATIONS; RESIDUAL COMPRESSIVE STRESS; STRUCTURE EVOLUTION;

CRYSTALLOGRAPHY; LITHIUM; PIEZOELECTRICITY; ZINC OXIDE;

ANNEALING;

EID: 84875175853     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795525     Document Type: Article

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