Control and characterization of the structural, electrical, and optical properties of amorphous zinc-indium-tin oxide thin films

ACS Applied Materials and Interfaces

Volumn 1, Issue 10, 2009, Pages 2147-2153

  Buchholz, D Bruce ^a   Liu, Jun ^b   Marks, Tobin J ^a,b   Zhang, Ming ^a   Chang, Robert P H ^a  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

amorphous; oxide; semiconductor; transparent conducting oxide

Indexed keywords

AMORPHOUS; CHANNEL LAYERS; CRYSTALLINITIES; DEPOSITION TEMPERATURES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTY; FIELD-EFFECT; HIGH MOBILITY; HIGH-MOBILITY SEMICONDUCTORS; INDIUM TIN OXIDE; MOLAR PROPORTIONS; OFF CURRENT; ON/OFF RATIO; OXYGEN PARTIAL PRESSURE; SATURATION MOBILITY; SEMICONDUCTOR; TRANSPARENT CONDUCTING OXIDE;

DIFFRACTION; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; FILM GROWTH; INDIUM; MESFET DEVICES; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; PULSED LASER DEPOSITION; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; TIN; TIN OXIDES; ZINC;

AMORPHOUS FILMS;

EID: 84862832866     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am900321f     Document Type: Article

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