Amorphous InGaZnO thin-film transistors-Part I: Complete extraction of density of states over the full subband-gap energy range

IEEE Transactions on Electron Devices

Volumn 59, Issue 10, 2012, Pages 2689-2698

  Kim, Yongsik ^a   Bae, Minkyung ^a   Kim, Woojoon ^a   Kong, Dongsik ^a   Choi, S ^a   Jung, Hyun Kwang ^a   Kim, Hyungtak ^b   Kim, Sunwoong ^d   Kim, Dong Myong ^a   Kim, Dae Hwan ^a,c  

^a Kookmin University   (South Korea)

^b Hong Ik University   (South Korea)

^c UNIVERSITY OF MICHIGAN   (United States)

^d NONE

Author keywords

Amorphous InGaZnO (a IGZO); density of states (DOS); full subband gap; thin film transistors (TFTs)

Indexed keywords

ACTIVE LAYER; AMORPHOUS INGAZNO; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); DC CHARACTERISTICS; DENSITY OF STATE; ENERGY RANGES; FABRICATION PROCESS; GATE OXIDE; GENERATION-RECOMBINATION; HIGH MOBILITY; INTERFACE TRAP DENSITY; MULTI FREQUENCY; OPERATION CONDITIONS; SUBBAND-GAP; SYSTEMATIC DESIGNS; THIN FILM MATERIAL; THIN-FILM TRANSISTOR (TFTS);

AMORPHOUS FILMS; AMORPHOUS MATERIALS;

THIN FILM TRANSISTORS;

EID: 84866737871     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2208969     Document Type: Article

References (29)

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