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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 11, 2011, Pages

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(4) Noh, Hyeon Kyun a Chang, K J a Ryu, Byungki b Lee, Woo Jin b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053607011 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.115205 Document Type: Article

Times cited : (276)

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