P-8: Effects of active thickness in oxide semiconductor tfts

Digest of Technical Papers - SID International Symposium

Volumn 40, Issue 1, 2009, Pages 1107-1109

  Hwang, Chi Sun ^a   Park, Sang Hee Ko ^a   Cheong, Woo Seok ^a   Shin, Jaeheon ^a   Yang, Shinhyuk ^a   Byun, Chunwon ^a   Ryu, Min Ki ^a   Cho, Doo Hee ^a   Yoon, Sung Min ^a   Chung, Sung Mook ^a   Chu, Hye Yong ^a   Cho, Kyoung Ik ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ACTIVE LAYER; CHANNEL LENGTH; CONSTANT CURRENT STRESS; N-TYPE DOPING; NEGATIVE SHIFT; OXIDE TFTS; SUBTHRESHOLD SWING; TURN-ON VOLTAGES;

OXIDE SEMICONDUCTORS;

EID: 85072808173     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1889/1.3256478     Document Type: Conference Paper

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