Performance of 5-nm a-IGZO TFTs with various channel lengths and an etch stopper manufactured by back UV exposure

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 824-826

  Mativenga, Mallory ^a   Geng, Di ^a   Chang, Jeff Hsin ^b   Tredwell, Timothy J ^b   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

^b CARESTREAM HEALTH INC   (United States)

Author keywords

Amorphous InGaZnO (a IGZO); inverter; ring oscillator; thin film transistor (TFT); ultrathin

Indexed keywords

AMORPHOUS INGAZNO; INVERTER; RING OSCILLATOR; THIN-FILM TRANSISTOR (TFTS); ULTRA-THIN;

SEMICONDUCTING ORGANIC COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 84861712573     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2191132     Document Type: Article

References (13)

1. J. K. Jeong, "The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays," Semicond. Sci. Technol., vol. 26, no. 3, p. 034008, Feb. 2011.
2. P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc., vol. 156, no. 3, pp. H161-H168, Dec. 2008.
3. L. Shao, K. Nomura, T. Kamiya, and H. Hosono, "Operation characteristics of thin-film transistors using very thin amorphous In-Ga-Zn-O channels," Electrochem. Solid-State Lett., vol. 14, no. 5, pp. H197-H200, Feb. 2011.
4. E. N. Cho, J. H. Kang, and I. Yun, "Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors," Microelectron. Rel., vol. 51, no. 9-11, pp. 1792-1795, Jul. 2011.
5. T. Kamiya, K. Nomura, and H. Hosono, "Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors," Appl. Phys. Lett., vol. 96, no. 12, pp. 122 103-1-122 103-3, Mar. 2010.
6. D. Geng, D. H. Kang, and J. Jang, "High-performance amorphous indium-gallium-zinc-oxide thin-film transistor with a self-aligned etch stopper patterned by back-side UV exposure," IEEE Electron Device Lett., vol. 32, no. 6, pp. 758-760, Jun. 2011.
7. P. Bhattacharya, M. Bari, and K. Rao, "Comparison of measurement techniques for gate shortening in sub-micrometer metal oxide semiconductor field effect transistors," Jpn. J. Appl. Phys., vol. 32, no. 8R, pp. 3409-3413, May 1993.
8. M. R. Wordeman, J. Y. C. Sun, and S. E. Laux, "Geometry effects in MOSFET channel length extraction algorithms," IEEE Electron Device Lett., vol. 6, no. 4, pp. 186-188, Apr. 1985. (Pubitemid 15480770)
9. M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, and H. S. Shin, "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett., vol. 90, no. 21, pp. 212 114-1-212 114-3, May 2007.
10. J. Jeong, Y. Hong, J. K. Jeong, J.-S. Park, and Y.-G. Mo, "MOSFETlike behavior of a-InGaZnO thin-film transistors with plasma-exposed source-drain bulk region," J. Display Tech., vol. 5, no. 12, pp. 495-500, Dec. 2009.
11. S. Kim, J. Park, C. Kim, I. Song, S. Kim, S. Park, H. Yin, H.-I. Lee, E. Lee, and Y. Park, "Source/drain formation of self-aligned top-gate amorphous GaInZnO thin-film transistors by NH3 plasma treatment," IEEE Electron Device Lett., vol. 30, no. 4, pp. 374-376, Apr. 2009.
12. M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, "Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor," Appl. Phys. Lett., vol. 99, no. 2, pp. 022104-1-022104-3, Jul. 2009.
13. A. Suresh, P.Wellenius, V. Baliga, H. Luo, L. M. Lunardi, and J. F. Muth, "Fast all-transparent integrated circuits based on indium gallium zinc oxide thin-film transistors," IEEE Electron Device Lett., vol. 31, no. 4, pp. 317-319, Apr. 2010.