Characterization of SiC MOSFET dual modules for future use in railway traction chains

PCIM Europe Conference Proceedings

Volumn , Issue , 2012, Pages 539-546

  Fabre, Joseph ^a,b   Ladoux, Philippe ^b   Piton, Michel ^a  

^a ALSTOM   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING VOLTAGE; OPERATING TEMPERATURE; RAILWAY TRACTION; SIC MOSFET; SILICON CARBIDE MOSFETS; SILICON CARBIDES (SIC); SWITCHING DEVICES; SWITCHING LOSS; SWITCHING SPEED;

ENERGY MANAGEMENT; EXHIBITIONS; INTELLIGENT ROBOTS; MOSFET DEVICES; POWER ELECTRONICS; RAILROADS;

SILICON CARBIDE;

EID: 84874169677     PISSN: None     EISSN: 21913358     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. M. Debruyne, "High power IGBT traction drives", WCRR'01 (World Conference on Railway Research), Cologne, Germany, November 2001.
2. L. D. Stevanovic, K. S. Matocha, P. A. Losee, J. S. Glaser, J. J. Nasadoski, S. D. Arthur, "Recent Advances in Silicon Carbide MOSFET Power Devices", Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, pp. 401-407, February 2010.
3. M. Mermet-Guyennet, "New power technologies for traction drives", Power Electronics Electrical Drives Automation and Motion (SPEEDAM), 2010 International Symposium on, pp. 719-723, Pise, Italy, June 2010.
4. [Online]. http://www.cree.com/.
5. [Online]. http://wwwrohm.com/.
6. th International Conference on, pp. 1-6, Nuremberg, Germany, March 2010.
7. E. Batista, J.M. Dienot, "EMC Characterization for Switching Noise Investigation on Power Transistors", Proceedings of 2008 IEEE EMC Detroit Symposium, Detroit, Michigan, August 2008.
8. S. Bemet, "Recent developments of high power converters for industry and traction applications". Power Electronics, IEEE Transactions on, vol. 15, Issue 6, pp. 1102-1117, November 2000.
9. C. Raynaud, D. Tournier, H. Morel, D. Planson, "Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices", Diamond & Related Materials, vol. 19, Issue 1, pp. 1-6, January 2010.