Modeling of the high-frequency rectifier with 10-kV SiC JBS diodes in high-voltage series resonant Type DC-DC Converters

IEEE Transactions on Power Electronics

Volumn 29, Issue 8, 2014, Pages 4288-4300

  Du, Yu ^a   Wang, Jun ^b   Wang, Gangyao ^c   Huang, Alex Q ^c  

^a ABB INC   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Circuit model; dc dc; high frequency; high voltage (HV); junction barrier Schottky (JBS) diode; rectifier; silicon carbide (SiC)

Indexed keywords

CAPACITANCE; CIRCUIT SIMULATION; CIRCUIT THEORY; DC-DC CONVERTERS; DIODES; ELECTRIC IMPEDANCE; ELECTRIC IMPEDANCE MEASUREMENT; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

CIRCUIT MODELING; DC-DC; HIGH FREQUENCY; HIGH VOLTAGE; JUNCTION BARRIER SCHOTTKY DIODES; RECTIFIER; SILICON CARBIDES (SIC);

ELECTRIC RECTIFIERS;

EID: 84897497838     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2288642     Document Type: Article

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