Switching performance comparison of the SiC JFET and SiC JFET/Si MOSFET cascode configuration

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2428-2440

  Alonso, Alberto Rodriguez ^a   Diaz, Marcos Fernandez ^a   Lamar, Diego G ^a   De Azpeitia, Manuel Arias Perez ^a   Hernando, Marta M ^a   Sebastian, Javier ^a  

^a UNIVERSITY OF OVIEDO   (Spain)

Author keywords

Cascode configuration; high efficiency converters; high frequency converters; SiC JFET; switching performance

Indexed keywords

CASCODE CONFIGURATION; HIGH FREQUENCY HF; HIGH-EFFICIENCY; SIC JFET; SWITCHING PERFORMANCE;

EFFICIENCY; FREQUENCY CONVERTERS; SILICON; SILICON CARBIDE; ZERO VOLTAGE SWITCHING;

MOSFET DEVICES;

EID: 84893152628     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2283144     Document Type: Article

References (19)

1. J. A. Cooper and A. Agarwal, "SiC power-switching devices. The second electronics revolution?" Proc. IEEE, vol. 90, no. 6, pp. 956-968, Jun. 2006.
2. A. Elasser and P. Chow, "Silicon carbide benefits and advantages for power electronics circuits and systems," Proc. IEEE, vol. 90, no. 6, pp. 969-986, Jun. 2002. (Pubitemid 43785870)
3. J. Milĺan, "Wide band-gap power semiconductor devices," IET Circuits Devices Syst., vol. 1, no. 5, pp. 372-379, 2007. (Pubitemid 350129129)
4. SiC enhancement-mode junction field effect transistor & recommendations for use, Appl. Note AN-SS1, SemiSouth, Starkville, MS, USA, 2009.
5. K. Mino, S. Herold, and J. W. Kolar, "A gate drive circuit for silicon carbide JFET," in Proc. IEEE Annu. Conf. Ind. Electron. Soc., 2003, vol. 2, pp. 1162-1166.
6. S. Round, M. Heldwein, J. Kolar, I. Hofsajer, and P. Friedrichs, "A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter," in Proc. IAS Annu. Meeting Ind. Appl. Conf., 2005, vol. 1, pp. 410-416. (Pubitemid 44042481)
7. T. Friedli, S. D. Round, D. Hassler, and J. W. Kolar, "Design and performance of a 200-kHz All-SiC JFET current DC-Link back-to-back converter," IEEE Trans. Ind. Appl., vol. 45, no. 5, pp. 1868-1878, Sep./Oct. 2009.
8. R. Lai, F. Wang, R. Burgos, D. Boroyevich, D. Zhang, and P. Ning, "A shoot-through protection scheme for converters built with SiC JFETs," IEEE Trans. Ind. Appl., vol. 46, no. 6, pp. 2495-2500, Nov./Dec. 2010.
9. C. Bernal, P. M. Gaudo, A. Gallego, A. Otin, and J. M. Burdio, "Halfbridge resonant inverter for domestic induction heating based on silicon carbide technology," in Proc. 27th Annu. IEEE Appl. Power Electron. Conf. Expo., Feb. 5-9, 2012, pp. 2218-2222.
10. A. Mihaila, F. Udrea, R. Azar, and G. Brezeanu, "Analysis of static and dynamic behaviour of SiC and Si devices connected in cascode configuration," in Proc. Semiconductor Conf., 2001, vol. 2, pp. 333-336. (Pubitemid 34763546)
11. D. Aggeler, J. Biela, and J. W. Kolar, "Controllable d?/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications," in Proc. IEEE 25th Annu. Appl. Power Electron. Conf. Expo., Feb. 21-25, 2010, pp. 1584-1590.
12. X. Huang, Z. Liu, Q. Li, and F. C. Lee, "Evaluation and application of 600 V GaN HEMT in cascode structure," in Proc. IEEE 28th Annu. Appl. Power Electron. Conf. Expo., Mar. 17-21, 2013, pp. 1279-1286.
13. R. Pittini, Z. Zhang, and M. A. E. Andersen, "SiC JFET cascode loss dependency on the MOSFET output capacitance and performance comparison with Trench IGBTs," in Proc. IEEE 28th Annu. Appl. Power Electron. Conf. Expo., Mar. 17-21, 2013, pp. 1287-1293.
14. Y.-F. Wu, "Paralleling high-speed GaN power HEMTs for quadrupled power output," in Proc. IEEE 28th Annu. Appl. Power Electron. Conf. Expo., Mar. 17-21, 2013, pp. 211-214.
15. S. K. Singh, F. Guedon, and R. McMahon, "Comparative switching behaviour of silicon transistors and practical silicon carbide transistors," in Proc. Int. Conf. Power Electron. Drive Syst., 2009, pp. 585-590.
16. A. Rodriguez, M. Fernandez, A. Vazquez, D. G. Lamar, M. Arias, and J. Sebastian, "Optimizing the efficiency of a dc-dc boost converter over 98% by using commercial SiC transistors with switching frequencies from 100 kHz to 1 MHz," in Proc. IEEE 28th Annu. Appl. Power Electron. Conf. Expo., Mar. 17-21, 2013, pp. 641-648.
17. Y.Wu,M. Jacob-Mitos, M. L. Moore, and S. Heikman, "A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz," IEEE Electron. Device Lett., vol. 29, no. 8, pp. 824-826, Aug. 2008.
18. J. Zhang, J.-S. Lai, R.-Y. Kim, andW. Yu, "High-power density design of a soft-switching high-power bidirectional dc-dc converter," IEEE Trans. Power Electron., vol. 22, no. 4, pp. 1145-1153, Jul. 2007. (Pubitemid 47098816)
19. D. Costinett, D. Maksimovic, R. Zane, and A. Rodŕ?guez, "Comparison of reverse recovery behavior of silicon and wide band gap diodes in high frequency power converters," presented at the IEEE Workshop Control Model., Salt Lake City, UT, USA, Jun. 2013.