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1
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0036053240
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1700V-IGBT3: Field stop technology with optimized trench structure-trend setting for the high power applications in industry and traction
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M. Pfaffenlehner, T. Laska, R. Mallwitz, A. Mauder, F. Pfirsch, C. Schaeffer, "1700V-IGBT3: Field Stop Technology with Optimized Trench Structure - Trend setting for The High Power Applications in Industry and Traction," Proc. ISPSD, 2002, pp. 105-109.
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Pfaffenlehner, M.1
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2
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4944245538
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New 3000Vchip generation with a trench IGBT and an optimized field stop concept with a smoot switching behavior
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M. Pfaffenlehner, J. Biermann, C. Schaeffer, H. Schulze, "New 3000Vchip Generation with a Trench IGBT and an Optimized Field Stop Concept with a Smoot Switching Behavior," Proc. ISPSD, 2004, pp.107-110.
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Pfaffenlehner, M.1
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3
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36248931923
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Investigations on 6.5kV trench IGBT and adapted EmCon diode
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J. G. Bauer, T. Duetemeyer, E. Falck, C. Schaeffer, G. Schmidt, H. Schulze, "Investigations on 6.5kV Trench IGBT and adapted EmCon Diode," Proc. ISPSD, 2007, pp.5-8.
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Bauer, J.G.1
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4
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84905437722
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6.5kV IGBT and FWD with trench and VLD technology for reduced losses and high dynamic ruggedness
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T. Duetemeyer, J.G. Bauer, E. Falck, C. Schaeffer, G. Schmidt, B. Stemmer, "6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness," Proc. PCIM, 2009.
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Duetemeyer, T.1
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5
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84906356341
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On the loss - Softness trade-off: Are different chip versions needed for softness-improvement?
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M. Bäßler, A. Ciliox, P. Kanschat, "On the loss - softness trade-off: Are different chip versions needed for softness-improvement? " Proc. PCIM, 2009.
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Bäßler, M.1
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6
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27744488548
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Investigations on the ruggedness limit of 6.5 kV IGBT
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J.G. Bauer, O. Schilling, C. Schaeffer, F. Hille, "Investigations on the Ruggedness Limit of 6.5 kV IGBT," Proc. ISPSD, 2005, pp. 71-74.
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(2005)
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Bauer, J.G.1
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7
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34247544446
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Novel enhanced-planar IGBT technology rated up to 6.5KV for lower losses and higher SOA capability
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M. Rahimo, A. Kopta, S. Linder, "Novel Enhanced-Planar IGBT Technology Rated up to 6.5KV for Lower Losses and Higher SOA Capability," Proc. ISPSD, 2006, pp. 69-72.
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Rahimo, M.1
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8
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34247476289
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Source side thermal runaway of trench IGBTs, dependence on design aspects
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A. Müller-Dauch, F. Pfirsch, M. Pfaffenlehner, D. Silber, "Source Side Thermal Runaway of Trench IGBTs, Dependence on Design Aspects," Proc. ISPSD, 2006, pp. 21-24.
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Müller-Dauch, A.1
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9
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49249094678
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The CIBH diode - Great improvement for ruggedness and softness of high voltage diodes
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H.-P. Felsl, M. Pfaffenlehner, H. Schulze, J. Biermann, T. Gutt, H.-J. Schulze, M. Chen, J. Lutz, "The CIBH Diode - Great Improvement for Ruggedness and Softness of High Voltage Diodes," Proc. ISPSD, 2008, pp. 173-1176.
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10
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39749160380
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600 V reverse conducting (RC-) IGBT for drives applications in ultra-thin wafer technology
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H. Ruething, F. Hille, F.-J. Niedernostheide, H.-J. Schulze, B. Brunner, "600 V Reverse Conducting (RC-) IGBT for Drives Applications in Ultra-Thin Wafer Technology," Proc. ISPSD, 2007, pp. 89-92.
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Ruething, H.1
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11
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51549106279
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Experimental study of a 6.5 kV MOS controllable freewheeling diode
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J.G. Bauer, T. Duetemeyer, F. Hille, O. Humbel, "Experimental Study of a 6.5 kV MOS Controllable Freewheeling Diode," Proc. ISPSD, 2008, pp. 40-44.
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Bauer, J.G.1
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12
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79953734725
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New semiconductor technologies challenge package and system setups
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G. Miller, "New Semiconductor Technologies challenge Package and System Setups," Proc. CIPS, 2010.
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(2010)
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Miller, G.1
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13
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84982175371
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Properties of a new PrimePACK™ IGBT module concept for optimized electrical and thermal interconnection to a modern converter environment
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O. Schilling, M. Wölz, G. Borghoff, Th. Nübel, G. Bräker, C. Lübke, "Properties of a New PrimePACK™ IGBT Module Concept for Optimized Electrical and Thermal Interconnection to a Modern Converter Environment," Proc. PCIM, 2005.
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(2005)
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Schilling, O.1
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