An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched All-Si, Si-SiC, and All-SiC device combinations

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2393-2407

  Oswald, Niall ^a   Anthony, Philip ^a   McNeill, Neville ^a   Stark, Bernard H ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Electromagnetic compatibility; electromagnetic interference (EMI); insulated gate bipolar transistors (IGBTs); silicon carbide (SiC); variable speed drives

Indexed keywords

ELECTRICAL MACHINE; EXPERIMENTAL INVESTIGATIONS; FAST RECOVERY DIODES; PERFORMANCE BENEFITS; SILICON CARBIDES (SIC); SPECTRAL AMPLITUDE; SWITCHING POWER DEVICES; SWITCHING WAVEFORMS;

ELECTRIC MACHINERY; ELECTROMAGNETIC COMPATIBILITY; ELECTROMAGNETIC PULSE; ELECTROMAGNETIC WAVE INTERFERENCE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; SIGNAL INTERFERENCE; SILICON; SWITCHING;

SILICON CARBIDE;

EID: 84893039498     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2278919     Document Type: Article

References (60)

1. J. Donlon, E. Motto, T. Takahashi, H. Fujii, and K. Satoh, "Chip improvements for future IGBT modules," in Proc. IEEE Ind. Appl. Soc. Annu. Meeting, 2008, pp. 1-7.
2. G. Majumdar and T. Minato, "Recent and future IGBT evolution," presented at Power Convers. Conf., Nagoya, Japan, 2007.
3. G.Majumdar, "Recent technologies and trends of power devices," in Proc. Int. Workshop on Phys. Semicond. Devices, 2007, pp. 787-792.
4. A.Elasser andT. Chow, "Silicon carbide benefits and advantages for power electronics circuits and systems," Proc. IEEE, vol. 90, no. 6, pp. 969-986, Jun. 2002. (Pubitemid 43785870)
5. J. Biela, M. Schweizer, S. Waffler, and J. Kolar, "SiC versus Si-Evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors," IEEE Trans. Ind. Electron., vol. 58, no. 7, pp. 2872-2882, Jul. 2011.
6. J. Rabkowski, D. Peftitsis, and H. Nee, "Silicon carbide power transistors: A new era in power electronics is initiated," IEEE Ind. Electron. Mag., vol. 6, no. 2, pp. 17-26, Jun. 2012.
7. K.Haehre,M.Meisser, F. Denk, and R.Kling, "Characterization and comparison of commercially available silicon carbide (SIC) power switches," presented at 6th IET Int. Conf. Power Electron.,Machines Drives, Bristol, UK, 2012.
8. A. Lemmon, M. Mazzola, J. Gafford, andK. Speer, "Comparative analysis of commercially available silicon carbide transistors," in Proc. 27th Annu. IEEE Appl. Power Electron. Conf. Expo., 2012, pp. 2509-2515.
9. CREE, Inc. (2012). CAS100H12AM1 Datasheet [Online]. Available: http://www.cree.com
10. Powerex, Inc. (2012). QJD1210006 Datasheet [Online]. Available: http://www.pwrx.com
11. R. Wood and T. Salem, "Evaluation of a 1200-V, 800-A all-SiC dual module," IEEE Trans. Power Electron., vol. 26, no. 9, pp. 2504-2511, Sep. 2011.
12. A. Lemmon, M. Mazzola, J. Gafford, and C. Parker, "Stability considerations for silicon carbide field effect transistors," IEEE Trans. Power Electron., vol. 28, no. 10, pp. 4453-4459, Oct. 2013.
13. B. Zhao, H. Qin, J. Wen, and Y. Yan, "Characteristics, applications and challenges of SiC power devices for future power electronic system," presented at 7th Int. Power Electron. Motion Control Conf., Harbin, China, 2012.
14. M. Adamowicz, S. Giziewski, J. Pietryka, M. Rutkowski, and Z. Krzeminski, "Evaluation of SiC JFETs and SiC schottky diodes for wind generation systems," in Proc. IEEE Int. Symp. Ind. Electron. (ISIE), 2011, pp. 269-276.
15. T. Noguchi and Suroso, "New topologies of multi-level power converters for use of next-generation ultra high-speed switching devices," in Proc. IEEE Energy Convers. Congr. Expo., 2009, pp. 1968-1975.
16. E. Rondon, F. Morel, C. Vollaire, and J.-L. Schanen, "Impact of SiC components on the EMC behaviour of a power electronics converter," presented at IEEE Energy Convers. Congr. Expo., Raleigh, NC, USA, 2012.
17. P. Bogonez-Franco and J. B. Sendra, "EMI comparison between Si and SiC technology in a boost converter," in Proc. Int. Symp. Electromagn. Compat., 2012, pp. 1-4.
18. H.-R. Chang, E. Hanna, and A. Radun, "Development and demonstration of silicon carbide (SiC) motor drive inverter modules," in Proc. IEEE 34th Annu. Power Electron. Spec. Conf., 2003, pp. 211-226.
19. T. Funaki, M. Sasagawa, and T. Nakamura, "Multi-chip SiC DMOSFET half-bridge power module for high temperature operation," in Proc. 27th Annu. IEEE Appl. Power Electron. Conf. Expo., 2012, pp. 2525-2529.
20. J. Glaser, J. Nasadoski, P. Losee, A. Kashyap, K. Matocha, J. Garrett, and L. Stevanovic, "Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications," in Proc. 26th Annu. IEEE Appl. Power Electron. Conf. Expo., 2011, pp. 1049-1056.
21. X. Gong, I. Josifovíc, and J. Ferreira, "Modeling and reduction of conducted EMI of inverters with SiC JFETs on insulated metal substrate," IEEE Trans. Power Electron., vol. 28, no. 7, pp. 3138-3146, Jul. 2013.
22. J. Rabkowski, D. Peftitsis, and H.-P. Nee, "Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%," in Proc. 27th Annu. IEEE Appl. Power Electron. Conf. Expo., 2012, pp. 1536-1543.
23. A. Trentin, P. Zanchetta, P. Wheeler, and J. Clare, "Performance evaluation of high-voltage 1.2 kV silicon carbide metal oxide semi-conductor field effect transistors for three-phase buck-type PWM rectifiers in aircraft applications," IET Power Electron., vol. 5, no. 9, pp. 1873-1881, Nov. 2012.
24. F. Xu, T. Han, D. Jiang, L. Tolbert, F. Wang, J. Nagashima, S. J. Kim, S. Kulkarni, and F. Barlow, "Development of a SiC JFET-based six-pack power module for a fully integrated inverter," IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1464-1478, Mar. 2013.
25. A. Agarwal, "An overview of SiC power devices," in Proc. Int. Conf. Power, Control Embedded Syst., 2010, pp. 1-4.
26. C. Cai, W. Zhou, and K. Sheng, "Characteristics and application of normally-off SiC-JFETs in converters without anti-parallel diodes," IEEE Trans. Power Electron., vol. 28, no. 10, pp. 4850-4860, Oct. 2013.
27. D. Jiang, R. Burgos, F. Wang, and D. Boroyevich, " Temperaturedependent characteristics of SiC devices: Performance evaluation and loss calculation," IEEE Trans. Power Electron., vol. 27, no. 2, pp. 1013-1024, Feb. 2012.
28. R. Lai, F.Wang, R. Burgos, and D. Boroyevich, "A shoot-through protection scheme for converters built with SiC JFETs," in Proc. IEEE Energy Convers. Congr. Expo., 2009, pp. 2301-2305.
29. I. Josifovic, J. Popovic-Gerber, and J. Ferreira, "Improving SiC JFET switching behavior under influence of circuit parasitics," IEEE Trans. Power Electron., vol. 27, no. 8, pp. 3843-3854, Aug. 2012.
30. O. Alatise, N.-A. Parker-Allotey, D. Hamilton, and P.Mawby, "The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes," IEEE Trans. Power Electron., vol. 27, no. 8, pp. 3826-3833, Aug. 2012.
31. M. Mermet-Guyennet, A. Castellazzi, J. Fabre, and P. Ladoux, "Electrical analysis and packaging solutions for high-current fast-switching SiC components," in Proc. 7th Int. Conf. Integr. Power Electron. Syst., 2012, pp. 1-6.
32. D. Peftitsis, R. Baburske, J. Rabkowski, J. Lutz, G. Tolstoy, and H. Nee, "Challenges regarding parallel connection of SiC JFETs," IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1449-1463, Mar. 2013.
33. P. Anthony, N. McNeill, andD.Holliday, "High-speed resonant gate driver with controlled peak gate voltage for silicon carbide MOSFETs," in Proc. IEEE Energy Convers. Congr. Expo., 2012, pp. 2961-2968.
34. K. Haehre, M. Meisser, F. Denk, R. Kling, and W. Heering, "Switching speed-control of an optimized capacitor-clamped normally-on silicon carbide JFET cascode," in Proc. 15th Int. Power Electron. Motion Control Conf., 2012, pp. DS1a.11-1-DS1a.11-5.
35. D. Peftitsis, J. Rabkowski, and H.-P. Nee, "Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply," IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1488-1501, Mar. 2013.
36. B. Wrzecionko, D. Bortis, J. Biela, and J. Kolar, "Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs," IEEE Trans. Power Electron., vol. 27, no. 7, pp. 3452-3463, Jul. 2012.
37. D. Aggeler, F. Canales, J. Biela, and J. W. Kolar, "dv/dt-Control methods for the SiC JFET/Si mosfet cascode," IEEE Trans. Power Electron., vol. 28, no. 8, pp. 4074-4082, Aug. 2013.
38. B. Drury, The Control Techniques Drives and Controls Handbook. London, UK: Inst. Eng. Technol., 2009.
39. N. Oswald,B. Stark, N. McNeill, andD.Holliday, "High-bandwidth, highfidelity in-circuit measurement of power electronic switching waveforms for EMI generation analysis," presented at IEEE Energy Convers. Congr. Expo. (ECCE), Phoenix, AZ, USA, 2011.
40. B. Touŕe, J.-L. Schanen, L. Gerbaud, T. Meynard, J. Roudet, and R. Ruelland, "EMC modeling of drives for aircraft applications: Modeling process, EMI filter optimization, and technological choice," IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1145-1156, Mar. 2013.
41. N. F. Oswald, B. H. Stark, and N. McNeill, "IGBT gate voltage profiling as ameans of realising an improved trade-off between EMI generation and turn-on switching losses," presented at 6th IET Int. Conf. Power Electron., Machines Drives, Bristol, UK, 2012.
42. P. Friedrichs, "Silicon carbide power devices-Status and upcoming challenges," in Proc. Euro. Conf. Power Electron. Appl., 2007, pp. 1-11.
43. J. Richmond. (2006). Hard-switched silicon IGBTs? Cut switching losses in half with silicon carbide schottky diodes [Online]. Available: http://www.cree.com
44. M. Nakazawa, T.Miyanagi, and S. Iwamoto. (2012). Hybrid Si-IGBT and SiC-SBD modules [Online]. Available: http://www.fujielectric.com./
45. B. Ozpineci, M. Chinthavali, L. Tolbert, A. Kashyap, and H. Mantooth, "A 55-kW Three-phase inverter with Si IGBTs and SiC schottky diodes," IEEE Trans. Ind. Appl., vol. 45, no. 1, pp. 278-285, Jan. 2009.
46. D. Veereddy, E. Lieser, and M. DiGangi. (2011). 1200 V/100 A Si IGBT/SiC diode copack cuts switching losses [Online]. Available: http://powerelectronics. com./
47. G. Skibinski, D. Braun, D. Kirschnik, and R. Lukaszewski. (2006). Developments in hybrid Si-SiC power modules [Online]. Available: http://literature.rockwellautomation.com./
48. Powerex, Inc. (2012). QID1210005 datasheet [Online]. Available: http://www.pwrx.com
49. F. Xu, B. Guo, L. Tolbert, F. Wang, and B. Blalock, "Evaluation of SiC MOSFETs for a high efficiency three-phase buck rectifier," in Proc. 27th Annu. IEEE Appl. Power Electron. Conf. Expo., 2012, pp. 1762-1769.
50. K. Shirabe, M. Swamy, J.-K. Kang, M. Hisatsune, Y. Wu, D. Kebort, and J. Honea, "Advantages of high frequency PWM in AC motor drive applications," presented at IEEE Energy Convers. Congr. Expo., Raleigh, NC, USA, 2012.
51. M. Lechler and B. Piepenbreier, "Regenerative SiC frequency converter with compact Z-source DC-link and sinusoidal output voltage," in Proc. Int. Symp. Power Electron., Elect. Drives, Autom.Motion, 2012, pp. 1506-1511.
52. N. Oswald, B. Stark, D. Holliday, C. Hargis, and B. Drury, "Analysis of shaped pulse transitions in power electronic switching waveforms for reduced EMI generation," IEEE Trans. Ind. Appl., vol. 47, no. 5, pp. 2154-2165, Sep. 2011.
53. M. Melfi, "Low-Voltage PWMinverter-fedmotor insulation issues," IEEE Trans. Ind. Appl., vol. 42, no. 1, pp. 128-133, Jan. 2006.
54. J. Erdman, R. Kerkman, D. Schlegel, and G. Skibinski, "Effect of PWM inverters on AC motor bearing currents and shaft voltages," in Proc. 10th Annual Appl. Power Electron. Conf. Expo., 1995, vol. 1, pp. 24-33.
55. Infineon Technologies AG. (2001). FP15R12KE3G datasheet [Online]. Available: http://www.infineon.com
56. InfineonTechnologiesAG. (2008). IKW15T120 datasheet [Online].Available: http://www.infineon.com
57. M. Treu, R. Rupp, P. Blaschitz, K. Ruschenschmidt, T. Sekinger, P. Friedrichs, R. Elpelt, and D. Peters, "Strategic considerations for unipolar SiC switch options: JFET vs. mosfet," in Proc. Conf. Rec. 2007 IEEE Ind. Appl. Conf., pp. 324-330.
58. Cree, Inc. (2011). CMF20120D datasheet and applications information [Online]. Available: http://scn.cree.com/products/pdf/CMF20120D.pdf
59. Infineon Technologies Austria AG. (2013). CoolMOS C7 650 V switch in a kelvin source configuration [Online]. Available: http://www.infineon.com./
60. X. Gong, J. Ferreira, and J. Popovic-Gerber, "Comparison and suppression of conducted EMI in SiC JFET and Si IGBT based motor drives," in Proc. 15th Int. Power Electron. Motion Control Conf., 2012, pp. DS2c.8-1-DS2c.8-8.