1000-H evaluation of a 1200-v, 880-A all-sic dual module

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2192-2198

  Salem, Thomas E ^a   Wood, Robert A ^b  

^a UNITED STATES NAVAL ACADEMY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Electric vehicles; high power; inverter; metal oxide semiconductor field effect transistors (MOSFET); silicon carbide

Indexed keywords

CIRCUIT OPERATION; COMMERCIAL AVAILABILITY; DEVICE CHARACTERISTICS; HIGH-POWER; INVERTER; LONG-TERM EVALUATION; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; VEHICLE APPLICATIONS;

ELECTRIC VEHICLES; MILITARY VEHICLES; MOSFET DEVICES;

SILICON CARBIDE;

EID: 84893029578     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2265661     Document Type: Article

References (27)

1. T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, H. A. Mantooth, F. Barlow,T.Kimoto, andT.Hikihara, "Power conversion with SiC devices at extremely high ambient temperatures," IEEE Trans. Power Electron., vol. 22, no. 4, pp. 1321-1329, Jul. 2007. (Pubitemid 47098833)
2. J.Wang, X. Zhou, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, and A. Agarwal, "10-kV SiC MOSFET-Based boost converter," IEEE Trans. Ind. Appl., vol. 45, no. 6, pp. 2056-2063, Nov./Dec. 2009.
3. A. R. Hefner, Jr. R. Singh, J.-S. Lai, D. W. Berning, S. Bouche, and C. Chapuy, "SiC power diodes provide breakthrough performance for a wide range of applications," IEEE Trans. Power Electron., vol. 16, no. 2, pp. 273-280, Mar 2001. (Pubitemid 32297436)
4. J. Biela, M. Schweizer, S. Waffler, and J. W. Kolar, "SiC versus Si-Evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors," IEEE Trans. Ind. Electron., vol. 58, no. 7, pp. 2872-2882, Jul. 2011.
5. R. Wang, D. Boroyevich, P. Ning, Z. Wang, F. Wang, P. Mattavelli, K. D. T. Ngo, and K. Rajashekara, "A high-temperature SiC Three-Phase AC-DC converter design for100 °C ambient temperature," IEEE Trans. Power Electron., vol. 28, no. 1, pp. 555-572, Jan. 2013.
6. Q. Zhang, R. Callanan, M. K. Das, S.-H. Ryu, A. K Agarwal, and J. W. Palmour, "SiC power devices for microgrids," IEEE Trans. Power Electron., vol. 25, no. 12, pp. 2889-2896, Dec. 2010.
7. R. Wood and T. E. Salem, "Application study of the benefits for using silicon-carbide versus silicon in power modules," in Proc. 27th Ann. Appl. Power Electron. Conf. Expo., Feb. 5-9, 2012, pp. 2499-2505.
8. T. Zhao, J. Wang, A. Q. Huang, and A. Agarwal, "Comparisons of SiC MOSFET and Si IGBT based motor drive systems," in Proc. IEEE Ind. Appl. Conf. 2007. 42nd IAS Ann. Meeting Conf. Record, Sep. 23-27, 2007, pp. 331-335.
9. M. Chinthavali, P. Otaduy, and B. Ozpineci, "Comparison of Si and SiC inverters for IPM traction drive," in Proc. 2010 IEEE Energy Convers. Congr. Expo., 2010, pp. 3360-3365.
10. K. Shenai, "Reliability of wide bandgap semiconductor power switching devices," in Proc. Aerosp. Electron. Conf. (NAECON), Proc. IEEE 2010 Nat., Jul. 14-16, 2010, pp. 322-327.
11. R. Singh, A. R. Hefner, and T. R. McNutt, "Reliability concerns in contemporary SiC power devices," in Proc. Int. Semicond. Device Res. Symp., Dec. 10-12, 2003, pp. 368-369.
12. M. Treu, R. Rupp, and G. Solkner, "Reliability of SiC power devices and its influence on their commercialization-Review, status, and remaining issues," in Proc. IEEE Int. Rel. Phys. Symp., May 2-6, 2010, pp. 156-161.
13. F. P. McCluskey, K. Meyyappan, and P. Hansen, "Failure mechanisms in SiC power module interconnects," in Proc. 4th Int. Conf. Integr. Power Syst., Jun. 7-9, 2006, pp. 1-6.
14. P. Hagler, R. W. Johnson, and L.-Y. Chen, "SiC Die Attach metallurgy and processes for applications up to 500," IEEE Trans. Compon., Packag. Manuf. Technol., vol. 1, no. 4, pp. 630-639, Apr. 2011.
15. A. Schletz, M. Nomann, M. Rauch, S. Kraft, and S. Egelkraut, "Reliability of insulating substrates-High temperature power electronics for more electric aircraft," in Proc. 14th Eur. Conf. Power Electron. Appl., Aug. 30-Sep. 1, 2011, pp. 1-7.
16. V. Banu, X. Jorda, J. Montserrat, P. Godignon, J. Millan, and P. Brosselard, "Accelerated test for reliability analysis of SiC diodes," in Proc. 21st Int. Symp. Power Semicond. Devices IC's, Jun. 14-18, 2009, pp. 267-270.
17. A. Scandurra, G. F. Indelli, R. Zafarana, A. Cavallaro, E. Scrofani, J. P. Giry, S. Russo, and M. Bakowski, "Molding compounds adhesion and influence on reliability of plastic packages for SiC-Based power MOS Devices," IEEE Trans. Compon., Packag. Manuf. Technol., to be published.
18. G. Bower, P. E. C. Rogan, J. Kozlowski, and M. Zugger, "SiC Power electronics packaging prognostics," in Proc. IEEE Aerosp. Conf., Mar. 1-8, 2008, pp. 1-12.
19. R.Wood and T. E. Salem, "Characteristics of a 1200 V, 550 A SiC DMOSFET dual module," in Proc. Power Convers. Intell. Motion, May 2010, pp. 293-298.
20. R. Wood and T. E. Salem, "Evaluation of a 1200 V, 800 A All SiC dual module," IEEE Trans. Power Electron., to be published. Available: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=5703134 %3Dtrue%26searchField%3DSearch-All%26queryText% 3D%28%28%28p- Authors%3Awood%29+AND+p-Authors%3Asalem% 29+AND+p-Title%3Aevaluation%29
21. R. A. Wood and T. E. Salem, "Long-term operation and reliability study of a 1200-V, 880-A All-SiC dual module," in Proc. 2012 Int. Symp. Power Electron., Elect. Drives, Autom. Motion, Jun. 2012, pp. 1520-1525.
22. J. Yamada, Y. Yu, J. F. Donlon, and E. R. Motto, "New mega power dual IGBT module with advanced 1200 V CSTBT chip," in Proc. 3th7Annu. IEEE Ind. Appl. Conf., Oct. 2002, pp. 2159-2164. (Pubitemid 35413707)
23. (2012). CMF20120D-Silicon Carbide Power MOSFET [Online]. Available: http://www.cree.com/products/pdf/CMF20120D.pdf
24. (2008). NATC Test Course Descriptions [Online]. Available: http://natcht. com/Test-Course-Descriptions.htm
25. (2007, Mar 31). Impact of military operational tempo on military equipment useful life and associated reconstitution and maintenance costs. [Online]. Available: www.acq.osd.mil/pepolicy/pdfs/OPTEMPO/Ph1Rpt.pdf
26. (2001). Government performance and results act performance plan for FY 2000. [Online]. Available: http://www.fas.org/man/docs/adr-00/apdx-j.htm
27. A. J. Lelis, D. Habersat, R. Green, and N. Goldsman, "Temperature- Dependence of SiC MOSFET threshold-voltage instability," Mat. Sci. Forum, vol. 600-603, pp. 807-10, 2009.