메뉴 건너뛰기




Volumn , Issue , 2009, Pages 1032-1035

High-temperature silicon carbide and silicon on insulator based integrated power modules

Author keywords

High temperature; SiC; Silicon carbide

Indexed keywords

AMBIENT TEMPERATURES; BUS VOLTAGE; GATE DRIVERS; HIGH TEMPERATURE; INTEGRATED POWER MODULE; JUNCTION TEMPERATURES; PEAK CURRENTS; POWER MODULE; POWER PACKAGE; SILICON ON INSULATOR;

EID: 72149112455     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VPPC.2009.5289735     Document Type: Conference Paper
Times cited : (48)

References (4)
  • 3
    • 33745879408 scopus 로고    scopus 로고
    • The Utilization of diamond and diamond-like-Carbon substrates for high performance power electronic packaging applications
    • Graz, Austria, August
    • Lostetter, Olejniczak, Brown, and Elshabini, "The Utilization of Diamond and Diamond-Like-Carbon Substrates for High Performance Power Electronic Packaging Applications, " 2001 EPE Conference, Graz, Austria, August 2001.
    • (2001) 2001 EPE Conference
    • Lostetter1    Olejniczak2    Brown3    Elshabini4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.