Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 310-317

  Madhusoodhanan, Sachin ^a   Hatua, Kamalesh ^a   Bhattacharya, Subhashish ^a   Leslie, Scott ^b   Ryu, Sei Hyung ^c   Das, Mrinal ^c   Agarwal, Anant ^c   Grider, David ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Powerex   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING VOLTAGE; COMPARATIVE STUDIES; COMPARISON STUDY; ELECTRONICS APPLICATIONS; GRID INTERFACES; IGBT DEVICES; LOW BAND GAP; MEDIUM VOLTAGE; SIC MOSFET; SILICON DEVICES; SOLID STATE TRANSFORMER (SST); STATCOM; STATIC CHARACTERISTIC; THREE-LEVEL NEUTRAL POINT CLAMPED;

ENERGY CONVERSION; EXHIBITIONS; MOSFET DEVICES; POWER CONVERTERS; POWER ELECTRONICS;

SILICON CARBIDE;

EID: 84870947926     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342807     Document Type: Conference Paper

References (11)

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