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Volumn , Issue , 2012, Pages
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Novel developments towards increased SiC power device and module efficiency
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NONE
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Author keywords
MOSFET; Power Module; Schottky; Silicon Carbide; Transfer Mold
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Indexed keywords
FORWARD VOLTAGE DROPS;
HIGH POWER APPLICATIONS;
HIGH POWER DENSITY;
IMPROVING PERFORMANCE;
INTERNAL ELECTRIC FIELDS;
MODULE EFFICIENCY;
MOS-FET;
MOSFETS;
ON-RESISTANCE;
OPERATING TEMPERATURE;
PERFORMANCE LEVEL;
POWER DEVICES;
POWER MODULE;
SCHOTTKY;
SCHOTTKY DIODES;
SIC DEVICES;
SIC DIODES;
ELECTRIC FIELDS;
ELECTRIC POWER SYSTEMS;
ENERGY DISSIPATION;
HIGH TEMPERATURE OPERATIONS;
MOSFET DEVICES;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
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EID: 84868561055
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/EnergyTech.2012.6304633 Document Type: Conference Paper |
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Times cited : (27)
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References (8)
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