Investigation of Si IGBT Operation at 200° C for traction applications

IEEE Transactions on Power Electronics

Volumn 28, Issue 5, 2013, Pages 2604-2615

  Xu, Zhuxian ^a   Li, Ming ^b   Wang, Fei ^a   Liang, Zhenxian ^c  

^a University of Tennessee   (United States)

^b Donnelly Corporation   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

High temperature characteristics; safe operating area; traction application; trench gate field stop silicon insulated gate bipolar transistor (IGBT)

Indexed keywords

CONVERTER LOSS; COOLANT LOOPS; DEVICE CHARACTERIZATION; DEVICE FORWARD CONDUCTION CHARACTERISTICS; ELEVATED TEMPERATURE; FAILURE MECHANISM; HIGH TEMPERATURE; JUNCTION TEMPERATURES; POWER DENSITIES; REDUCING COSTS; RELIABLE OPERATION; SAFE OPERATING AREA; SHORT CIRCUIT CAPABILITY; SHORT-CIRCUIT FAULT; SWITCHING PERFORMANCE; SYSTEMATIC STUDY; THERMAL CONDITION; TRACTION APPLICATIONS; TRACTION DRIVE;

HYBRID VEHICLES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); LEAKAGE CURRENTS; TEMPERATURE CONTROL;

SILICON;

EID: 84870550281     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2217398     Document Type: Article

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