Development of advanced all-sic power modules

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2289-2295

  Liang, Zhenxian ^a   Ning, Puqi ^a,b   Wang, Fred ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (China)

^c University of Tennessee   (United States)

Author keywords

Automotive power converter; integrated cooling; power electronics packaging; SiC power module

Indexed keywords

INTEGRATED COOLING; INTEGRATED PACKAGING; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; POWER DENSITIES; POWER ELECTRONICS SYSTEMS; POWER MODULE; POWER SEMICONDUCTOR DEVICES; SILICON CARBIDES (SIC);

ELECTRONICS PACKAGING; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES;

SILICON CARBIDE;

EID: 84893136226     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2289395     Document Type: Article

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