A review of WBG power semiconductor devices

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2012, Pages 57-66

  Millán, José ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

GaN; HEMTs; MOSFETs; power devices; rectifiers; SiC

Indexed keywords

GAN; HEMTS; MOSFETS; POWER DEVICES; SIC;

CONVERSION EFFICIENCY; ELECTRIC RECTIFIERS; GALLIUM NITRIDE; POWER ELECTRONICS; SILICON CARBIDE;

SEMICONDUCTOR DEVICES;

EID: 84872860841     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2012.6400696     Document Type: Conference Paper

References (50)

1. A. Argawal, "Advances in SiC MOSFET Performance", ECPE SiC & GaN Forum Potential of WideBandgap Semiconductors in Power Electronic Applications, Birmingham 2011.
2. Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour, T. Hayashi, "12-19 kV 4H-SiC pin Diodes with Low Power Loss", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 27-30, 2001.
3. H. Niwa, G. Feng, J. Suda, and T. Kimoto, "Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with ImprovedJunction Termination Structures", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 381-384, 2012.
4. R. Singh, D.C. Capell, A.R. Hefner, J. Lai, J.W. Palmour, "High-Power 4H-SiC JBS Rectifiers", IEEE Trans. Electron Dev., 49(11), pp. 2054-2063, 2002.
5. A Pérez-Tomás, P. Brosselard, J. Hassan, X Jordà, P. Godignon, M. Placidi, A. Constant, J. Millán and J. P. Bergman, "Schottky versus bipolar 3.3 kV SiC diodes", Semicond. Sci. Technol. 23, p. 125004 (7pp), 2008.
6. R. Rupp, I. Zverev, "SiC Power Devices: How to be Competitive towards Si-based Solutions", Materials Science Forum, 433-436, pp. 805-812, 2003.
7. Cree Inc. 4600 Silicon Dr., Durham, NC 27703. www.cree.com/power, part CID 150660B, datasheet CID150660 Rev. A.
8. Infineon Technologies AG PO Box 80 0949, D-81609 Munchen, Germany, www.infineon.com/sic, part SDT12S60, datasheet SDT12S60 Rev.2.2.
9. B.A. Hull, M. K. Das, J.T. Richmond, J.J. Sumakeris, R. Leonard, J.W. Palmour, S. Leslie, "A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 277-280, 2006.
10. D. Stephani, "Today's and Tomorrow's Industrial Utilization of Silicon Carbide Power Devices", Proc .of the 10th European Conference on Power Electronics and Application, EPE'2003.
11. Information available online at: http://ompoundsemiconductor.net/ articles/magazine/8/1/7/1.
12. Semisouth: Silicon Carbide Enhancement-Mode JFET and Recommendations for Use. Application Note AN- SS1. July 2011.
13. M.K. Das, "Recent Advances in (0001) 4H-SiC MOS Device Technology", Material Science Forum, 457-460, pp. 1275-1280, 2004.
14. N.G. Wright, N. Poolami, K.V. Vassilevski, A.B. Horsfall, C.M. Johnson.,"Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs", Material Science Forum, 457-460, pp. 1433-1436, 2004.
15. C. Blanc, D. Tournier, P. Godignon, D.J. Bring, V. Souliere, J. Camassel, "Process Optimisation for 〈11-20〉 4H-SiC MOSFET Applications", Material Science Forum, 527-529, pp. 1051-1054, 2006.
16. S.-H. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal, A. Hefner, "10 kV, 5 A 4H-SiC Power DMOSFET", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 265-268, 2006.
17. M.K. Das, R. Callanan, D. Craig Capell, B. Hull, F. Husna, J. Richmond, M. O'loughlin, M.J. Paisley, A. Powell and Q. Zhang, "State of the Art 10 kV NMOS Transistors", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 253-259, 2008.
18. S.-H. Ryu, C. Capell, Ch. Jonas, L. Cheng, M. O'Loughlin, A. Burk, A. Agarwal, J. Palmour, and A. Hefner, "Ultra High Voltage (>12 kV), High Performance 4H-SiC IGBTs", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 257-260, 2012.
19. D. Okamoto, H. Yano, K. Hirata, T. Hatayama, T. Fuyuki "Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide", IEEE Electron Device Lett., 31(7), pp. 710-712, July 2010.
20. S. Ryu, B. Hull, S. Dhar, L. Cheng, Q. Zhang, J. Richmond, M. Das, A. Agawal, J. Palmour, A Lelis, B. Geil, C. Scozzie, "Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs", Mater. Sci. Forum, 645-648, pp. 969-974, 2010.
21. A. Agarwal, "Advanced in SiC MOSFET Performance", ECPE SiC & GaN Forum. Potencial of Wide Bandgap Semiconductors in Power Electronics Applications, Sept. 2011, Birmingham, UK.
22. http://www.cree.com/products/pdf/CMF20120D.pdf
23. http://www.rohm.com/products/sic/trench.html
24. S. Krishnaswami, A. Agarwal, J. Richmond, T.P. Chow, B. Geil, K. Jones, Ch. Scozzie, "4 kV, 10 A Bipolar Junction Transistors in 4H-SiC", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 289-292, 2006.
25. A. Tanaka, S. Ogata, T. Izumi, K. Nakayama, T. Hayashi, Y. Miyanagi and K. Asano, "Reliability Investigation of SiC Bipolar Device Module in Long Time Inverter Operation", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 233-236, 2012.
26. A.P. Zhang, G.T. Dang, F. Ren, H. Cho, K.-P. Lee, S.J. Pearton, J.-I. Chyi, T.-E. Nee, C.-C. Chuo, "Comparison of GaN P-I-N and Schottky Rectifier Performance", IEEE Trans. Electron. Dev., 48, pp. 407-411, 2001.
27. A.P. Zhang, J. W. Jonson, F. Ren, "Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage", Appl. Phys. Lett, 78, pp. 823-825, 2001.
28. http://www.powdec.co.jp/Diode.pdf, 2010.
29. M. Placidi, A. Pérez-Tomás, A. Constant, G. Rius, N. Mestres, J. Millán and P. Godignon, "Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN", Applied Surface Science, 255, pp. 6057-6060, 2009.
30. M.A. Khan, J.N. Kuznia, D.T. Olson, W.J. Schaff, J.W. Burm and M.S. Shur, "Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor", Appl. Phys. Lett. 65, pp. 1121-1123, 1994.
31. Y.-F. Wu, M. Moore, T. Wisleder, A. Saxler, and P. Parikh, "40-W/mm double field-plated GaN HEMTs", Proc. IEEE Device Res. Conf., pp. 151-152, 2006.
32. N. Ikeda, S. Kaya, J. Li, Y. Sato, S. Kato and S. Yoshida, "High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4-inch Si substrates and the suppression of current collapse", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 287-290., 2008.
33. T. Oku, Y. Kamo and M. Totsuka, "AlGaN/GaN HEMTs passivated by Cat-CVD SiN Film", Thin Solid Films, 516, pp. 545-547, 2008 and refs. therein.
34. S. Yoshida, J. Li, H. Takehara, H. Kambayashi, N. Ikeda, "Fabrication of AlGaN/GaN HFET with a high breakdown voltage of over 1050 V", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 317-320., 2006.
35. E. Bahat-Treidel, F. Brunner, O. Hilt, E. Cho, J. Würfl, and G. Tränkle, "AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON x A", IEEE Trans. Electron. Dev., 55, pp. 3050-3058, 2010.
36. P. Srivastava, J. Das, D.Visalli, M. Van Hove, P. E. Malinowski, D. Marcon, S. Lenci, K. Geens, K. Cheng, M. Leys, S. Decoutere, R.P. Mertens, and G. Borghs,"Record Breakdown Voltage (2200 V) of GaN DHFETs on Si with 2-μm Buffer Thickness by Local Substrate Removal", IEEE Electron Device Lett., 32(1) pp. 30-32, 2011.
37. Y. Uemoto, D. Shibata, M. Yanagihara, H. Ishida, H. Matsuo, S. Nagai, N. Batta, M. Li, T. Ueda, T. Tanaka, and D. Ueda, "8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AIN Passivation", IEDM Techn. Dig., pp. 861-864,2007.
38. K.S. Boutros, S. Chandrasekaran, W.B. Luo, V. Mehrotra, "GaN Switching Devices for High-Frequency, kW Power Conversion", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 321-323, 2006.
39. W. Huang, T.P: Chow, Y. Niiyama, T. Nomura and S. Yoshida, "Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 291-294, 2008.
40. M. Asif Khan, Q. Chen, C. J. Sun, J. W. Wang, M. Blasingame, M.S. Shur and H. Park, "Enhancement and depletion mode AlGaN heterostructure field effect transistors", Appl. Phys. Lett., 68, 514, 1996.
41. W. Saito,et al., "Recessed-gate structure approach toward normally-off high-voltage AlGaN/GaN HEMT for Power Electronics Applications", IEEE Trans. Electron. Devices, 53, 356, 2006.
42. Y. Cai et al, "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode", IEEE Trans. Electron. Devices, 53, 2207, 2006.
43. X. Hu, G. Simin, J. Yang, M. A. Khan, R. Gaska, and M.S. Shur, "Enhancement-mode AlGaN/GaN HFET with selectively grown pn junction gate ", Electronic Letters, 36, 753, 2000.
44. T. Nakayama, Y. Ando, Y. Okamoto, T. Inoue, and H. Miyamoto, "CW 140W recessed-gate AlGaN-GaN MISFET with field-modulating plate", Electronic Letters, 42, 489, 2006.
45. H. Kambayashi et al., "Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage", Solid-State Electronics, 54, 660, 2010.
46. T. Palacios, C.S. Suh, A. Chakraborty, S. Keller, S.P. DenBaars, and U.K. Mishra, "High-performance E-Mode AlGaN/GaN HEMTs", IEEE Electron. Device Lett., 27, 428, 2006.
47. M. Kuroda et al., "Nonpolar AlGaN/GaN Metal-insulator-semiconductor heterojunction field-effect transistors with a normally-off operation", IEEE Trans. Electron. Devices, 57, 368, 2010.
48. S-H. Ryu, C. Capell, Ch. Jonas, L. Cheng, M. O'Loughlin, A. Burk, A. Agarwal, J. Palmour and A. Hefner, "Ultra High Voltage (>12 kV), High Performance 4H-SiC IGBTs", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 257-260, 2012.
49. A. Fontserè, A.Pérez-Tomás, V. Banu, P.Godignon, J.Millán, H. De Vleeschouwer, J. M. Parseydand P. Moens, "A HfO2 based 800V/300° C Au-free AlGaN/GaN-on-Si HEMT Technology", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 37-40, 2012.
50. O. Hilt, E. Bahat-Treidel, E. Cho, S. Singwald and J. Würfl, "Impact of Buffer Composition on the Dynamic On- State Resistance of High-Voltage AlGaN/GaN HFETs", Proc. International Symp. Power Devices and ICs, ISPSD, pp. 3457-348, 2012.