Reverse-conducting-IGBTs - A new IGBT technology setting new benchmarks in traction converters

2013 15th European Conference on Power Electronics and Applications, EPE 2013

Volumn , Issue , 2013, Pages

  Hermann, Robert ^a   Krafft, Eberhard Ulrich ^a   Marz, Andreas ^b  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF BAYREUTH   (Germany)

Author keywords

Diode; IGBT; Traction converter

Indexed keywords

GATE CONTROL; REVERSE CONDUCTING; TRACTION APPLICATIONS; TRACTION CONVERTERS;

DIODES; ELECTRONICS ENGINEERING; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

POWER ELECTRONICS;

EID: 84890149948     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPE.2013.6631806     Document Type: Conference Paper

References (6)

1. M. Rahimo, U. Schlapbach, A. Kopta, J. Vobecky, D. Schneider, A. Baschnagel: A High Current 3300V Module Employing Reverse Conducting IGBTs, ISPSD 2008.
2. H.-G. Eckel: Potential of Reverse Conducting IGBTs in Voltage Source Inverters, PCIM
3. H.-G. Eckel: Comparison of the Output Power of RC-IGBT and IGBT / Diode Inverters, PCIM 2011.
4. M. Rahimo, U. Schlapbach, R. Schnell, A. Kopta, J. Vobecky, A. Baschnagel: Realization of Higher Output Power Capability with the Bi-Mode Insulated Gate Transistor (BIGT), EPE 2009.
5. D. Wigger, H.-G. Eckel: Comparison of the Power Cycling Stress between IGBT and BIGT Inverters, PCIM 2010.
6. A. Kopta, M. Rahimo, R. Schnell, M. Bayer, U. Schlapbach, J. Vobecky, D. Schneider: The next genera-tion 3300V BIGT HiPak modules with current ratings exceeding 2000A, PCIM 2010.