Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure concept for 600V class SJ-RC-IGBT in a single chip solution

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 137-140

  Minato, Tadaharu ^a   Aono, Shinji ^a   Uryu, Katsumi ^a   Yamaguchi, Takashi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

CSTBT; FWD; MOSFET; RC IGBT; Reverse Recovery; SOA; STM; Super Junction; UIS

Indexed keywords

CSTBT; FWD; MOS-FET; RC-IGBT; REVERSE RECOVERY; SOA; STM; SUPER JUNCTIONS; UIS;

BIPOLAR TRANSISTORS;

MOSFET DEVICES;

EID: 84864758813     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229042     Document Type: Conference Paper

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