Characterization and comparison of 1.2 kV SiC power semiconductor devices

2013 15th European Conference on Power Electronics and Applications, EPE 2013

Volumn , Issue , 2013, Pages

  Di Marino, Christina ^a   Chen, Zheng ^a   Boroyevich, Dushan ^a   Burgos, Rolando ^a   Mattavelli, Paolo ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Bipolar Junction Transistor (BJT); Device characterization; JFET; MOSFET; Power semiconductor device; Silicon Carbide (SiC)

Indexed keywords

DEVICE CHARACTERIZATION; DYNAMIC CHARACTERIZATION; INCREASING TEMPERATURES; MOS-FET; POWER SEMICONDUCTOR DEVICES; SILICON CARBIDES (SIC); SPECIFIC-ON-RESISTANCE; STATIC CHARACTERIZATION;

CHARACTERIZATION; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

BIPOLAR TRANSISTORS;

EID: 84890192227     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPE.2013.6634364     Document Type: Conference Paper

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