Design and implementation of integrated common mode capacitors for SiC-JFET inverters

IEEE Transactions on Power Electronics

Volumn 29, Issue 7, 2014, Pages 3625-3636

  Robutel, Remi ^a   Martin, Christian ^a   Buttay, Cyril ^a   Morel, Herve ^a   Mattavelli, Paolo ^b   Boroyevich, Dushan ^b   Meuret, Regis ^c  

^a UNIVERSITÉ DE LYON   (France)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^c SAFRAN AIRCRAFT ENGINES   (France)

Author keywords

Electromagnetic compatibility; inverters; multichip modules

Indexed keywords

AIRCRAFT APPLICATIONS; CONDUCTED EMI EMISSION; CONDUCTED EMISSIONS; DESIGN AND IMPLEMENTATIONS; HIGH FREQUENCY HF; HIGH-FREQUENCY NOISE; INTEGRATED CAPACITORS; SWITCHING WAVEFORMS;

CAPACITORS; DESIGN; ELECTRIC POWER SYSTEMS; ELECTROMAGNETIC COMPATIBILITY; ELECTROMAGNETIC PULSE; MULTICHIP MODULES; SILICON CARBIDE; SWITCHING SYSTEMS;

ELECTRIC INVERTERS;

EID: 84897712831     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2279772     Document Type: Article

References (26)

1. B.Baliga, "Power semiconductor device figure ofmerit for high-frequency applications," IEEE Electron Device Lett., vol. 10, no. 10, pp. 455-457, Oct. 1989.
2. T. Funaki, J. Balda, J. Junghans, A. Kashyap, H. Mantooth, F. Barlow, T. Kimoto, and T. Hikihara, "Power conversion with SiC devices at extremely high ambient temperatures," IEEE Trans. Power Electron., vol. 22, no. 4, pp. 1321-1329, Jul. 2007. (Pubitemid 47098833)
3. R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. Karimi, andV. Immanuel, "Development of a 10 kw high power density three-phase AC-DC-AC converter using SiC devices," in Proc. 13th Eur. Conf. Power Electron. Appl., Sep. 2009, pp. 1-12.
4. D.Aggeler, J. Biela, and J.Kolar, "Acompact, high voltage 25 kW, 50 kHz DC-DC converter based on SiC JFETs," in Proc. 39th Power Electron. Spec. Conf., Jun. 2008, pp. 801-807.
5. F.Dubois, D. Risaletto,R.Robutel, H. Morel, R. Meuret, andD.Bergogne, "High temperature inverter for aerospace application," IMAPS Adv. Microelectron., vol. 38, no. 4, pp. 24-29, Jul. 2011.
6. R. Wood and T. Salem, "Evaluation of a 1200 V, 800 A all SiC dual module," IEEE Trans. Power Electron., vol. 26, no. 9, pp. 2504-2511, Sep. 2011.
7. N. Boughrara, S. Moumen, S. Lefebvre, Z. Khatir, P. Friedrichs, and J. Faugieres, "Robustness of SiC JFET in short-circuit modes," IEEE Electron Device Lett., vol. 30, no. 1, pp. 51-53, Jan. 2009.
8. C. Jettanasen, F. Costa, and C. Vollaire, "Common-mode emissions measurements and simulation in variable-speed drive systems," IEEE Trans. Power Electron., vol. 24, no. 11, pp. 2456-2464, Nov. 2009.
9. R. Burgos, Z. Chen, D. Boroyevich, and F.Wang, "Design considerations of a fast 0-Ohm gate-drive circuit for 1.2 kV SiC JFET devices in phaseleg configuration," in Proc. 1st Energy Convers. Congr. Expo., Sep. 2009, pp. 2293-2300.
10. M. Heldwein and J. Kolar, "Impact of EMC filters on the power density of modern three-phase PWM converters," IEEE Trans. Power Electron., vol. 24, no. 6, pp. 1577-1588, Jun. 2009.
11. D. Jiang, R. Lai, F.Wang, F. Luo, S.Wang, and D. Boroyevich, "Study of conducted EMI reduction for three-phase Vienna-type rectifier," in Proc. Int. Power Electron. Conf., Jun. 2010, pp. 1118-1124.
12. H. Akagi and T. Shimizu, "Attenuation of conducted EMI emissions from an inverter-driven motor," IEEE Trans. Power Electron., vol. 23, no. 1, pp. 282-290, Jan. 2008.
13. A. Baisden, D. Boroyevich, and J. van Wyk, "Impedance interaction and EMI attenuation in converters with an integrated transmission-line filter," in Proc. 22th Appl. Power Electron. Conf., 2007, pp. 1203-1208.
14. R. Chen, J. van Wyk, S. Wang, and W. Odendaal, "Improving the characteristics of integrated EMI filters by embedded conductive layers," IEEE Trans. Power Electron., vol. 20, no. 3, pp. 611-619, May 2005. (Pubitemid 40715009)
15. J. Biela, A.Wirthmueller,R.Waespe,M.Heldwein,K.Raggl, and J.Kolar, "Passive and active hybrid integrated EMI filters," IEEE Trans. Power Electron., vol. 24, no. 5, pp. 1340-1349, Jun. 2009.
16. J.-L. Schanen and J. Roudet, "Built-in EMC for integrated power electronics systems," in Proc. 5th IEEE Int. Conf. Integr. Power Syst., 2008, pp. 1-10.
17. P. Ning, R. Lai, D. Huff, F. Wang, K. Ngo, V. Immanuel, and K. Karimi, "SiC wirebond multichip phase-leg module packaging design and testing for harsh environment," IEEE Trans. Power Electron., vol. 25, no. 1, pp. 16-23, Jan. 2010.
18. T. Ben Salah, Y. Lahbib, and H. Morel, "Modelling, analysis, and experimental study of SiC JFET body diode," Eur. Phys. J. Appl. Phys., vol. 53, no. 1, pp. 30305-1-30305-8, 2011.
19. D. Peftitsis, G. Tolstoy, A. Antonopoulos, J. Rabkowski, J. Lim, M. Bakowski, L. Angquist, and H. Nee, "High-power modular multilevel converters with SiC JFETs," IEEE Trans. Power Electron., vol. 27, no. 1, pp. 28-36, Jan. 2012.
20. D. Jiang, R. Burgos, F.Wang, andD. Boroyevich, "Temperature dependent characteristics of SiC devices: Performance evaluation and loss calculation," IEEE Trans. Power Electron., vol. 27, no. 1, pp. 1013-1024, Feb. 2012.
21. H. Morel, Y. Hamieh, D. Tournier, R. Robutel, F. Dubois, D. Risaletto, C. Martin, D. Bergogne, C. Buttay, and R. Meuret, "A multi-physics model of the VJFET with a lateral channel," in Proc. 14th Eur. Conf. Power Electron. Appl., 2011, pp. 1-10.
22. O.Berry,Y.Hamieh, S. Räel, F. Meibody-Tabar, S.Vieillard, D. Bergogne, and H. Morel, "Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor," Mater. Sci. Forum, vol. 645, pp. 957-960, 2010.
23. C. Martin, J.-L. Schanen, J.-M. Guichon, and R. Pasterczyk, "Analysis of electromagnetic coupling and current distribution inside a power module," IEEE Trans. Ind. Appl., vol. 43, no. 4, pp. 893-901, Jul. 2007. (Pubitemid 47249962)
24. J.-L. Schanen, C. Martin, D. Frey, and R.-J. Pasterczyk, "Impedance criterion for power modules comparison," IEEE Trans. Power Electron., vol. 21, no. 1, pp. 18-26, Jan. 2006. (Pubitemid 46395368)
25. Environmental Conditions and Test Procedures for Airborne Equipment, RTCA Standard DO-160F/EUROCAE 14F, Mar. 2008.
26. R. Robutel, C. Martin, H. Morel, C. Buttay, N. Gazel, and D. Bergogne, "Design of a high temperature emi input filter for a 2 kwhvdc-fed inverter," J. Microelectron. Electron. Packag., vol. 8, no. 1, pp. 23-30, 2011.