-
1
-
-
81555227927
-
Nanometre-scale electronics with III-V compound semiconductors
-
Del Alamo, J. A. Nanometre-scale electronics with III-V compound semiconductors. Nature 479, 317-323 (2011).
-
(2011)
Nature
, vol.479
, pp. 317-323
-
-
Del Alamo, J.A.1
-
2
-
-
0035804248
-
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
-
Duan, X., Huang, Y., Cui, Y., Wang, J. & Lieber, C. M. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409, 66-69 (2001).
-
(2001)
Nature
, vol.409
, pp. 66-69
-
-
Duan, X.1
Huang, Y.2
Cui, Y.3
Wang, J.4
Lieber, C.M.5
-
3
-
-
84882706953
-
Tunable electronic transport properties of metal-cluster-decorated iii-v nanowire transistors
-
Han, N. et al. Tunable electronic transport properties of metal-cluster-decorated iii-v nanowire transistors. Adv. Mater. 25, 4445-4451 (2013).
-
(2013)
Adv. Mater
, vol.25
, pp. 4445-4451
-
-
Han, N.1
-
4
-
-
20144369634
-
Nanowire dye-sensitized solar cells
-
Law, M., Greene, L. E., Johnson, J. C., Saykally, R. & Yang, P. Nanowire dye-sensitized solar cells. Nat. Mater. 4, 455-459 (2005).
-
(2005)
Nat. Mater
, vol.4
, pp. 455-459
-
-
Law, M.1
Greene, L.E.2
Johnson, J.C.3
Saykally, R.4
Yang, P.5
-
5
-
-
84902157844
-
Monolithic III-V nanowire solar cells on graphene via direct van der waals epitaxy
-
Mohseni, P. K. et al. Monolithic III-V nanowire solar cells on graphene via direct van der waals epitaxy. Adv. Mater. 26, 3755-3760 (2014).
-
(2014)
Adv. Mater
, vol.26
, pp. 3755-3760
-
-
Mohseni, P.K.1
-
6
-
-
84894185660
-
Electron transport in multi-gate InxGa1-xAs nanowire FETs: From diffusive to ballistic regimes at room temperature
-
Thathachary, A. V., Agrawal, N., Liu, L. & Datta, S. Electron transport in multi-gate InxGa1-xAs nanowire FETs: from diffusive to ballistic regimes at room temperature. Nano Lett. 14, 626-633 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 626-633
-
-
Thathachary, A.V.1
Agrawal, N.2
Liu, L.3
Datta, S.4
-
7
-
-
84864697454
-
A III-V nanowire channel on silicon for high-performance vertical transistors
-
Tomioka, K., Yoshimura, M. & Fukui, T. A III-V nanowire channel on silicon for high-performance vertical transistors. Nature 488, 189-192 (2012).
-
(2012)
Nature
, vol.488
, pp. 189-192
-
-
Tomioka, K.1
Yoshimura, M.2
Fukui, T.3
-
8
-
-
84874355840
-
InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit
-
Wallentin, J. et al. InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit. Science 339, 1057-1060 (2013).
-
(2013)
Science
, vol.339
, pp. 1057-1060
-
-
Wallentin, J.1
-
9
-
-
84870839518
-
Manipulated growth of GaAs nanowires: Controllable crystal quality and growth orientations via a supersaturation-controlled engineering process
-
Han, N. et al. Manipulated growth of GaAs nanowires: controllable crystal quality and growth orientations via a supersaturation-controlled engineering process. Cryst. Growth Design 12, 6243-6249 (2012).
-
(2012)
Cryst. Growth Design
, vol.12
, pp. 6243-6249
-
-
Han, N.1
-
10
-
-
84860387802
-
Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices
-
Hou, J. J. et al. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices. ACS Nano 6, 3624-3630 (2012).
-
(2012)
ACS Nano
, vol.6
, pp. 3624-3630
-
-
Hou, J.J.1
-
11
-
-
84886888853
-
Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires
-
Xu, G. et al. Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires. RSC Adv. 3, 19834-19839 (2013).
-
(2013)
RSC Adv.
, vol.3
, pp. 19834-19839
-
-
Xu, G.1
-
12
-
-
84887577364
-
Crystalline GaSb nanowires synthesized on amorphous substrates: From the formation mechanism to p-channel transistor applications
-
Yang, Z.-X. et al. Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications. ACS Appl. Mater. Interf. 5, 10946-10952 (2013).
-
(2013)
ACS Appl. Mater. Interf
, vol.5
, pp. 10946-10952
-
-
Yang, Z.-X.1
-
13
-
-
84863643257
-
Synthesis of antimony-based nanowires using the simple vapor deposition method
-
Zi, Y., Zhao, Y., Candebat, D., Appenzeller, J. & Yang, C. Synthesis of antimony-based nanowires using the simple vapor deposition method. Chemphyschem 13, 2585-2588 (2012).
-
(2012)
Chemphyschem
, vol.13
, pp. 2585-2588
-
-
Zi, Y.1
Zhao, Y.2
Candebat, D.3
Appenzeller, J.4
Yang, C.5
-
14
-
-
84876592984
-
Diameter limitation in growth of III-Sb-containing nanowire heterostructures
-
Ek, M., Borg, B. M., Johansson, J. & Dick, K. A. Diameter limitation in growth of III-Sb-containing nanowire heterostructures. ACS Nano 7, 3668-3675 (2013).
-
(2013)
ACS Nano
, vol.7
, pp. 3668-3675
-
-
Ek, M.1
Borg, B.M.2
Johansson, J.3
Dick, K.A.4
-
15
-
-
77958055794
-
InAs/GaSb heterostructure nanowires for tunnel field-effect transistors
-
Borg, B. M. et al. InAs/GaSb heterostructure nanowires for tunnel field-effect transistors. Nano Lett. 10, 4080-4085 (2010).
-
(2010)
Nano Lett.
, vol.10
, pp. 4080-4085
-
-
Borg, B.M.1
-
16
-
-
84869202290
-
Single InAs/GaSb nanowire low-power CMOS inverter
-
Dey, A. W., Svensson, J., Borg, B. M., Ek, M. & Wernersson, L.-E. Single InAs/GaSb nanowire low-power CMOS inverter. Nano Lett. 12, 5593-5597 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 5593-5597
-
-
Dey, A.W.1
Svensson, J.2
Borg, B.M.3
Ek, M.4
Wernersson, L.-E.5
-
17
-
-
84876939865
-
Synthesis and properties of antimonide nanowires
-
Borg, B. M. & Wernersson, L.-E. Synthesis and properties of antimonide nanowires. Nanotechnology 24, 202001 (2013).
-
(2013)
Nanotechnology
, vol.24
-
-
Borg, B.M.1
Wernersson, L.-E.2
-
18
-
-
84861435254
-
Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
-
Mourik, V. et al. Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices. Science 336, 1003-1007 (2012).
-
(2012)
Science
, vol.336
, pp. 1003-1007
-
-
Mourik, V.1
-
19
-
-
84868706104
-
The fractional a.c. Josephson effect in a semiconductor-superconductor nanowire as a signature of Majorana particles
-
Rokhinson, L. P., Liu, X. & Furdyna, J. K. The fractional a.c. Josephson effect in a semiconductor-superconductor nanowire as a signature of Majorana particles. Nat. Phys. 8, 795-799 (2012).
-
(2012)
Nat. Phys.
, vol.8
, pp. 795-799
-
-
Rokhinson, L.P.1
Liu, X.2
Furdyna, J.K.3
-
20
-
-
84870902104
-
Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device
-
Deng, M. et al. Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device. Nano Lett. 12, 6414-6419 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 6414-6419
-
-
Deng, M.1
-
21
-
-
84862937192
-
GaSb nanowire single-hole transistor
-
Ganjipour, B. et al. GaSb nanowire single-hole transistor. Appl. Phys. Lett. 99, 262104 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.99
-
-
Ganjipour, B.1
-
22
-
-
84898888201
-
Solution-based synthesis of III-V quantum dots and their applications in gas sensing and bio-imaging
-
Fan, G., Wang, C. & Fang, J. Solution-based synthesis of III-V quantum dots and their applications in gas sensing and bio-imaging. Nano Today 9, 69-84 (2014).
-
(2014)
Nano Today
, vol.9
, pp. 69-84
-
-
Fan, G.1
Wang, C.2
Fang, J.3
-
23
-
-
0032644461
-
Solvothermal synthesis of nanocrystalline III-V semiconductors
-
Qian, Y. Solvothermal synthesis of nanocrystalline III-V semiconductors. Adv. Mater. 11, 1101-1102 (1999).
-
(1999)
Adv. Mater
, vol.11
, pp. 1101-1102
-
-
Qian, Y.1
-
24
-
-
84897999676
-
2 hierarchical nanowire arrays with fast electron transport properties
-
2 hierarchical nanowire arrays with fast electron transport properties. Nano Lett. 14, 1848-1852 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 1848-1852
-
-
Sheng, X.1
He, D.2
Yang, J.3
Zhu, K.4
Feng, X.5
-
25
-
-
67650649432
-
ZnO with different morphologies synthesized by solvothermal methods for enhanced photocatalytic activity
-
Xu, L. et al. ZnO with different morphologies synthesized by solvothermal methods for enhanced photocatalytic activity. Chem. Mater. 21, 2875-2885 (2009).
-
(2009)
Chem. Mater
, vol.21
, pp. 2875-2885
-
-
Xu, L.1
-
26
-
-
0037418372
-
Solution-liquid-solid growth of soluble GaAs nanowires
-
Yu, H. & Buhro, W. E. Solution-liquid-solid growth of soluble GaAs nanowires. Adv. Mater. 15, 416-419 (2003).
-
(2003)
Adv. Mater
, vol.15
, pp. 416-419
-
-
Yu, H.1
Buhro, W.E.2
-
27
-
-
0041784066
-
Two-versus three-dimensional quantum confinement in indium phosphide wires and dots
-
Yu, H., Li, J., Loomis, R. A., Wang, L.-W. & Buhro, W. E. Two-versus three-dimensional quantum confinement in indium phosphide wires and dots. Nat. Mater. 2, 517-520 (2003).
-
(2003)
Nat. Mater
, vol.2
, pp. 517-520
-
-
Yu, H.1
Li, J.2
Loomis, R.A.3
Wang, L.-W.4
Buhro, W.E.5
-
28
-
-
0034159506
-
Surfactant-assisted metallorganic CVD of (111)-oriented copper films with excellent surface smoothness
-
Hwang, E. S. & Lee, J. Surfactant-assisted metallorganic CVD of (111)-oriented copper films with excellent surface smoothness. Electrochem. Solid State Lett. 3, 138-140 (2000).
-
(2000)
Electrochem. Solid State Lett.
, vol.3
, pp. 138-140
-
-
Hwang, E.S.1
Lee, J.2
-
29
-
-
84863856504
-
Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation
-
Sun, M. et al. Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation. Nano Lett. 12, 3378-3384 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 3378-3384
-
-
Sun, M.1
-
30
-
-
84881433569
-
Sulfur passivation of GaSb (100) surfaces: Comparison of aqueous and alcoholic sulfide solutions using synchrotron radiation photoemission spectroscopy
-
Lebedev, M. V., Kunitsyna, E. V., Calvet, W., Mayer, T. & Jaegermann, W. Sulfur passivation of GaSb (100) surfaces: comparison of aqueous and alcoholic sulfide solutions using synchrotron radiation photoemission spectroscopy. J. Phys. Chem. C 117, 15996-16004 (2013).
-
(2013)
J. Phys. Chem. C
, vol.117
, pp. 15996-16004
-
-
Lebedev, M.V.1
Kunitsyna, E.V.2
Calvet, W.3
Mayer, T.4
Jaegermann, W.5
-
31
-
-
84878270049
-
Conductance enhancement of InAs/InP heterostructure nanowires by surface functionalization with oligo (phenylene vinylene) s
-
Schukfeh, M. I. et al. Conductance enhancement of InAs/InP heterostructure nanowires by surface functionalization with oligo (phenylene vinylene) s. ACS Nano 7, 4111-4118 (2013).
-
(2013)
ACS Nano
, vol.7
, pp. 4111-4118
-
-
Schukfeh, M.I.1
-
32
-
-
80055019684
-
2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors
-
2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors. Appl. Phys. Lett. 99, 152113 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.99
-
-
Gu, J.1
Neal, A.2
Ye, P.3
-
33
-
-
84863657263
-
Controllable p-n switching behaviors of GaAs nanowires via an interface effect
-
Han, N. et al. Controllable p-n switching behaviors of GaAs nanowires via an interface effect. ACS Nano 6, 4428-4433 (2012).
-
(2012)
ACS Nano
, vol.6
, pp. 4428-4433
-
-
Han, N.1
-
34
-
-
84884891032
-
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors
-
Yang, Z.-X. et al. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors. Nanoscale 5, 9671-9676 (2013).
-
(2013)
Nanoscale
, vol.5
, pp. 9671-9676
-
-
Yang, Z.-X.1
-
35
-
-
33745630999
-
Structural properties of '111' B-oriented III-V nanowires
-
Johansson, J. et al. Structural properties of '111' B-oriented III-V nanowires. Nat. Mater. 5, 574-580 (2006).
-
(2006)
Nat. Mater
, vol.5
, pp. 574-580
-
-
Johansson, J.1
-
36
-
-
84896334118
-
Controlled synthesis of phase-pure InAs nanowires on Si (111) by diminishing diameter to 10 nm
-
Pan, D. et al. Controlled synthesis of phase-pure InAs nanowires on Si (111) by diminishing diameter to 10 nm. Nano Lett. 14, 1214-1220 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 1214-1220
-
-
Pan, D.1
-
37
-
-
0001987119
-
Study of magnetism in osmium cluster compounds as molecular models for small metallic particles
-
Johnson, D., Benfield, R., Edwards, P., Nelson, W. & Vargas, M. Study of magnetism in osmium cluster compounds as molecular models for small metallic particles. Nature 314, 231-235 (1985).
-
(1985)
Nature
, vol.314
, pp. 231-235
-
-
Johnson, D.1
Benfield, R.2
Edwards, P.3
Nelson, W.4
Vargas, M.5
-
38
-
-
0037016619
-
Size-dependent chemistry: Properties of nanocrystals
-
Rao, C., Kulkarni, G., Thomas, P. J. & Edwards, P. P. Size-dependent chemistry: Properties of nanocrystals. Chem. Eur. J. 8, 28-35 (2002).
-
(2002)
Chem. Eur. J
, vol.8
, pp. 28-35
-
-
Rao, C.1
Kulkarni, G.2
Thomas, P.J.3
Edwards, P.P.4
-
39
-
-
0030449345
-
Quantum-size effects in the thermodynamic properties of metallic nanoparticles
-
Volokitin, Y. et al. Quantum-size effects in the thermodynamic properties of metallic nanoparticles. Nature 384, 621-623 (1996).
-
(1996)
Nature
, vol.384
, pp. 621-623
-
-
Volokitin, Y.1
-
40
-
-
67049098848
-
Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire
-
Perea, D. E. et al. Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire. Nat. Nanotechnol. 4, 315-319 (2009).
-
(2009)
Nat. Nanotechnol
, vol.4
, pp. 315-319
-
-
Perea, D.E.1
-
41
-
-
84892173476
-
Gold-free ternary III-V antimonide nanowire arrays on silicon: Twin-free down to the first bilayer
-
Conesa-Boj, S. et al. Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer. Nano Lett. 14, 326-332 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 326-332
-
-
Conesa-Boj, S.1
-
42
-
-
34548155548
-
III-V nanowire growth mechanism: V/III ratio and temperature effects
-
Dayeh, S. A., Yu, E. T. & Wang, D. III-V nanowire growth mechanism: V/III ratio and temperature effects. Nano Lett. 7, 2486-2490 (2007).
-
(2007)
Nano Lett.
, vol.7
, pp. 2486-2490
-
-
Dayeh, S.A.1
Yu, E.T.2
Wang, D.3
-
43
-
-
26844475917
-
A new understanding of Au-assisted growth of III-V semiconductor nanowires
-
Dick, K. A. et al. A new understanding of Au-assisted growth of III-V semiconductor nanowires. Adv. Funct. Mater. 15, 1603-1610 (2005).
-
(2005)
Adv. Funct. Mater
, vol.15
, pp. 1603-1610
-
-
Dick, K.A.1
-
44
-
-
84897973326
-
Au-seeded growth of vertical and in-plane III-V nanowires on graphite substrates
-
Wallentin, J., Kriegner, D., Stangl, J. & Borgström, M. T. Au-seeded growth of vertical and in-plane III-V nanowires on graphite substrates. Nano Lett. 14, 1707-1713 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 1707-1713
-
-
Wallentin, J.1
Kriegner, D.2
Stangl, J.3
Borgström, M.T.4
-
45
-
-
84874594683
-
Measurement of mobility in dual-gated MoS2 transistors
-
Fuhrer, M. S. & Hone, J. Measurement of mobility in dual-gated MoS2 transistors. Nat. Nanotechnol. 8, 146-147 (2013).
-
(2013)
Nat. Nanotechnol
, vol.8
, pp. 146-147
-
-
Fuhrer, M.S.1
Hone, J.2
-
46
-
-
84874640657
-
Reply to'Measurement of mobility in dual-gated MoS2 transistors'
-
Radisavljevic, B. & Kis, A. Reply to'Measurement of mobility in dual-gated MoS2 transistors'. Nat. Nanotechnol. 8, 147-148 (2013).
-
(2013)
Nat. Nanotechnol
, vol.8
, pp. 147-148
-
-
Radisavljevic, B.1
Kis, A.2
-
47
-
-
0034727086
-
Nano-sized transition-metal oxides as negative-electrode materials for lithium-ion batteries
-
Poizot, P., Laruelle, S., Grugeon, S., Dupont, L. & Tarascon, J. Nano-sized transition-metal oxides as negative-electrode materials for lithium-ion batteries. Nature 407, 496-499 (2000).
-
(2000)
Nature
, vol.407
, pp. 496-499
-
-
Poizot, P.1
Laruelle, S.2
Grugeon, S.3
Dupont, L.4
Tarascon, J.5
-
48
-
-
61649109093
-
Diameter-dependent electron mobility of InAs nanowires
-
Ford, A. C. et al. Diameter-dependent electron mobility of InAs nanowires. Nano Lett. 9, 360-365 (2008).
-
(2008)
Nano Lett.
, vol.9
, pp. 360-365
-
-
Ford, A.C.1
-
49
-
-
77957045562
-
-
eds Willardson, R. K. & Beer, A. C. Academic Press
-
Wiley, J. D. in Semiconductors and Semimetals, Vol. 10 (eds Willardson, R. K. & Beer, A. C.) 91 (Academic Press, 1975).
-
(1975)
Semiconductors and Semimetals
, vol.10
, pp. 91
-
-
Wiley, J.D.1
-
50
-
-
61649100813
-
Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline InAs nanowires
-
Ford, A. C. et al. Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline InAs nanowires. Nano Res. 1, 32-39 (2008).
-
(2008)
Nano Res.
, vol.1
, pp. 32-39
-
-
Ford, A.C.1
-
51
-
-
84875127830
-
Diameter dependence of electron mobility in InGaAs nanowires
-
Hou, J. J. et al. Diameter dependence of electron mobility in InGaAs nanowires. Appl. Phys. Lett. 102, 093112 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.102
-
-
Hou, J.J.1
-
52
-
-
84886995122
-
GaAs nanowires: From manipulation of defect formation to controllable electronic transport properties
-
Han, N. et al. GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties. ACS Nano 7, 9138-9146 (2013).
-
(2013)
ACS Nano
, vol.7
, pp. 9138-9146
-
-
Han, N.1
-
53
-
-
56249141773
-
Characterization of GaSb nanowires grown by MOVPE
-
Jeppsson, M. et al. Characterization of GaSb nanowires grown by MOVPE. J. Cryst. Growth. 310, 5119-5122 (2008).
-
(2008)
J. Cryst. Growth
, vol.310
, pp. 5119-5122
-
-
Jeppsson, M.1
-
54
-
-
77951022972
-
Growth and characterization of unintentionally doped GaSb nanowires
-
Burke, R. A. et al. Growth and characterization of unintentionally doped GaSb nanowires. J. Electron Mater. 39, 355-364 (2010).
-
(2010)
J. Electron Mater
, vol.39
, pp. 355-364
-
-
Burke, R.A.1
|