Electron transport in multigate InxGa1-x as nanowire FETs: From diffusive to ballistic regimes at room temperature

Nano Letters

Volumn 14, Issue 2, 2014, Pages 626-633

  Thathachary, Arun V ^a   Agrawal, Nidhi ^a   Liu, Lu ^a   Datta, Suman ^a  

^a The Pennsylvania State University   (United States)

Author keywords

ballistic transport; diffusive transport; electrical transport; Field effect transistor; Hall cross; Hall effect; III V; multigate FET; nanowire FET CMOS; scattering

Indexed keywords

EID: 84894185660     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4038399     Document Type: Article

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