Diameter limitation in growth of III-Sb-containing nanowire heterostructures

ACS Nano

Volumn 7, Issue 4, 2013, Pages 3668-3675

  Ek, Martin ^a   Borg, B Mattias ^a,b   Johansson, Jonas ^a   Dick, Kimberly A ^a  

^a LUND UNIVERSITY   (Sweden)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

antimonides; Gibbs Thomson; III Sb materials; III V materials; MOVPE; nanowires

Indexed keywords

ANTIMONIDES; CARRIER CONFINEMENTS; CATALYST PARTICLES; CRITICAL DIAMETER; GIBBS-THOMSON; GROWTH CONDITIONS; NANOWIRE HETEROSTRUCTURES; PRECURSOR PARTIAL PRESSURE;

GALLIUM ALLOYS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; POWER ELECTRONICS; THERMOELECTRICITY;

NANOWIRES;

ANTIMONY; NANOWIRE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ANTIMONY; COMPUTER SIMULATION; CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOWIRES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 84876592984     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400684p     Document Type: Article

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