SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 9, 2013, Pages

Diameter dependence of electron mobility in InGaAs nanowires

(10) Hou, Jared J a Wang, Fengyun a Han, Ning a Zhu, Haoshen a Fok, Kitwa a Lam, Waichak a Yip, Senpo a Hung, Takfu a Lee, Joshua E Y a Ho, Johnny C a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; NANOWIRES; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SURFACE ROUGHNESS; TEMPERATURE; TEMPERATURE MEASUREMENT;

AGGRESSIVE SCALING; DESIGN CONSIDERATIONS; DIAMETER DEPENDENCES; DIAMETER DEPENDENT; LOW-TEMPERATURE MEASUREMENTS; SINGLE CRYSTALLINE NANOWIRES; SURFACE ROUGHNESS SCATTERING; VAPOR TRANSPORT METHODS;

GALLIUM ALLOYS;

EID: 84875127830 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4794414 Document Type: Article

Times cited : (34)

References (19)

1
- 84873688819
- 10.1021/nl304237b.
- Y. N. Guo, H. Y. Xu, G. J. Auchterlonie, T. Burgess, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, H. B. Shu, X. S. Chen, W. Lu, Y. Kim, and J. Zou, Nano Lett. 13, 643 (2013) 10.1021/nl304237b.
- (2013) Nano Lett. , vol.13 , pp. 643
- Guo, Y.N.¹ Xu, H.Y.² Auchterlonie, G.J.³ Burgess, T.⁴ Joyce, H.J.⁵ Gao, Q.⁶ Tan, H.H.⁷ Jagadish, C.⁸ Shu, H.B.⁹ Chen, X.S.¹⁰ Lu, W.¹¹ Kim, Y.¹² Zou, J.¹³

2
- 84864697454
- 10.1038/nature11293
- K. Tomioka, M. Yoshimura, and T. Fukui, Nature 488, 189 (2012). 10.1038/nature11293
- (2012) Nature , vol.488 , pp. 189
- Tomioka, K.¹ Yoshimura, M.² Fukui, T.³

3
- 84860387802
- 10.1021/nn300966j
- J. J. Hou, N. Han, F. Y. Wang, F. Xiu, S. P. Yip, A. T. Hui, T. F. Hung, and J. C. Ho, ACS Nano 6, 3624 (2012). 10.1021/nn300966j
- (2012) ACS Nano , vol.6 , pp. 3624
- Hou, J.J.¹ Han, N.² Wang, F.Y.³ Xiu, F.⁴ Yip, S.P.⁵ Hui, A.T.⁶ Hung, T.F.⁷ Ho, J.C.⁸

4
- 84864491945
- 10.1063/1.4738769
- S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Döblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, M.-C. Amann, G. Abstreiter, and G. Koblmüller, Appl. Phys. Lett. 101, 043116 (2012). 10.1063/1.4738769
- (2012) Appl. Phys. Lett. , vol.101 , pp. 043116
- Hertenberger, S.¹ Funk, S.² Vizbaras, K.³ Yadav, A.⁴ Rudolph, D.⁵ Becker, J.⁶ Bolte, S.⁷ Döblinger, M.⁸ Bichler, M.⁹ Scarpa, G.¹⁰ Lugli, P.¹¹ Zardo, I.¹² Finley, J.J.¹³ Amann, M.-C.¹⁴ Abstreiter, G.¹⁵ Koblmüller, G.¹⁶

5
- 80051702746
- 10.1109/JSTQE.2010.2077621
- H. J. Joyce, G. Qiang, J. Wong-Leung, K. Yong, H. H. Tan, and C. Jagadish, IEEE J. Sel. Top. Quantum Electron. 17, 766-788 (2011). 10.1109/JSTQE.2010.2077621
- (2011) IEEE J. Sel. Top. Quantum Electron. , vol.17 , pp. 766-788
- Joyce, H.J.¹ Qiang, G.² Wong-Leung, J.³ Yong, K.⁴ Tan, H.H.⁵ Jagadish, C.⁶

6
- 81555227927
- 10.1038/nature10677
- J. A. del Alamo, Nature 479, 317 (2011). 10.1038/nature10677
- (2011) Nature , vol.479 , pp. 317
- Del Alamo, J.A.¹

7
- 56549106697
- 10.1109/TED.2008.2005151
- C. Thelander, C. Rehnstedt, L. E. Froberg, E. Lind, T. Martensson, P. Caroff, T. Lowgren, B. J. Ohlsson, L. Samuelson, and L. E. Wernersson, IEEE Trans. Electron Devices 55, 3030 (2008). 10.1109/TED.2008.2005151
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 3030
- Thelander, C.¹ Rehnstedt, C.² Froberg, L.E.³ Lind, E.⁴ Martensson, T.⁵ Caroff, P.⁶ Lowgren, T.⁷ Ohlsson, B.J.⁸ Samuelson, L.⁹ Wernersson, L.E.¹⁰

8
- 33646271349
- 10.1109/LED.2006.873381
- N. Singh, A. Agarwal, L. K. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H. Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett. 27, 383 (2006). 10.1109/LED.2006.873381
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 383
- Singh, N.¹ Agarwal, A.² Bera, L.K.³ Liow, T.Y.⁴ Yang, R.⁵ Rustagi, S.C.⁶ Tung, C.H.⁷ Kumar, R.⁸ Lo, G.Q.⁹ Balasubramanian, N.¹⁰ Kwong, D.L.¹¹

9
- 84858264771
- 10.1021/nl204126n
- C. Gutsche, R. Niepelt, M. Gnauck, A. Lysov, W. Prost, C. Ronning, and F. J. Tegude, Nano Lett. 12, 1453 (2012). 10.1021/nl204126n
- (2012) Nano Lett. , vol.12 , pp. 1453
- Gutsche, C.¹ Niepelt, R.² Gnauck, M.³ Lysov, A.⁴ Prost, W.⁵ Ronning, C.⁶ Tegude, F.J.⁷

10
- 2942739152
- 10.1098/rsta.2004.1377
- L. J. Lauhon, M. S. Gudiksen, and C. M. Lieber, Philos. Trans. R. Soc. London, Ser. A 362, 1247 (2004). 10.1098/rsta.2004.1377
- (2004) Philos. Trans. R. Soc. London, Ser. A , vol.362 , pp. 1247
- Lauhon, L.J.¹ Gudiksen, M.S.² Lieber, C.M.³

11
- 3142715886
- 10.1063/1.1762695
- R. Kotlyar, B. Obradovic, P. Matagne, M. Stettler, and M. D. Giles, Appl. Phys. Lett. 84, 5270 (2004). 10.1063/1.1762695
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5270
- Kotlyar, R.¹ Obradovic, B.² Matagne, P.³ Stettler, M.⁴ Giles, M.D.⁵

12
- 61649109093
- 10.1021/nl803154m
- A. C. Ford, J. C. Ho, Y.-L. Chueh, Y.-C. Tseng, Z. Fan, J. Guo, J. Bokor, and A. Javey, Nano Lett. 9, 360 (2009). 10.1021/nl803154m
- (2009) Nano Lett. , vol.9 , pp. 360
- Ford, A.C.¹ Ho, J.C.² Chueh, Y.-L.³ Tseng, Y.-C.⁴ Fan, Z.⁵ Guo, J.⁶ Bokor, J.⁷ Javey, A.⁸

13
- 84867833195
- 10.1021/nn304174g
- J. J. Hou, F. Y. Wang, N. Han, F. Xiu, S. P. Yip, M. Fang, H. Lin, T. F. Hung, and J. C. Ho, ACS Nano 6, 9320 (2012). 10.1021/nn304174g
- (2012) ACS Nano , vol.6 , pp. 9320
- Hou, J.J.¹ Wang, F.Y.² Han, N.³ Xiu, F.⁴ Yip, S.P.⁵ Fang, M.⁶ Lin, H.⁷ Hung, T.F.⁸ Ho, J.C.⁹

14
- 84555197330
- 10.1021/nn203948x
- D. K. Kim, Y. Lai, T. R. Vemulkar, and C. R. Kagan, ACS Nano 5, 10074 (2011). 10.1021/nn203948x
- (2011) ACS Nano , vol.5 , pp. 10074
- Kim, D.K.¹ Lai, Y.² Vemulkar, T.R.³ Kagan, C.R.⁴

15
- 79961034101
- 10.1021/nn2017777
- J. S. Tang, C. Y. Wang, F. X. Xiu, M. R. Lang, L. W. Chu, C. J. Tsai, Y. L. Chueh, L. J. Chen, and K. L. Wang, ACS Nano 5, 6008 (2011). 10.1021/nn2017777
- (2011) ACS Nano , vol.5 , pp. 6008
- Tang, J.S.¹ Wang, C.Y.² Xiu, F.X.³ Lang, M.R.⁴ Chu, L.W.⁵ Tsai, C.J.⁶ Chueh, Y.L.⁷ Chen, L.J.⁸ Wang, K.L.⁹

16
- 58149214099
- 10.1109/TNANO.2008.2003353
- W. F. Yang, S. J. Lee, G. C. Liang, R. Eswar, Z. Q. Sun, and D. L. Kwong, IEEE Trans. Nanotechnol. 7, 728 (2008). 10.1109/TNANO.2008.2003353
- (2008) IEEE Trans. Nanotechnol. , vol.7 , pp. 728
- Yang, W.F.¹ Lee, S.J.² Liang, G.C.³ Eswar, R.⁴ Sun, Z.Q.⁵ Kwong, D.L.⁶

17
- 34247402596
- 10.1063/1.2728762
- S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, Appl. Phys. Lett. 90, 162112 (2007). 10.1063/1.2728762
- (2007) Appl. Phys. Lett. , vol.90 , pp. 162112
- Dayeh, S.A.¹ Soci, C.² Yu, P.K.L.³ Yu, E.T.⁴ Wang, D.⁵

18
- 67651163764
- 10.1088/0957-4484/20/29/295202
- K. Rogdakis, S. Poli, E. Bano, K. Zekentes, and M. G. Pala, Nanotechnology 20, 295202 (2009). 10.1088/0957-4484/20/29/295202
- (2009) Nanotechnology , vol.20 , pp. 295202
- Rogdakis, K.¹ Poli, S.² Bano, E.³ Zekentes, K.⁴ Pala, M.G.⁵

19
- 56549113551
- 10.1109/TED.2008.2005164
- S. Poli, M. G. Pala, T. Poiroux, S. Deleonibus, and G. Baccarani, IEEE Trans. Electron Devices 55, 2968 (2008). 10.1109/TED.2008.2005164
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2968
- Poli, S.¹ Pala, M.G.² Poiroux, T.³ Deleonibus, S.⁴ Baccarani, G.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.