SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 3, Issue 43, 2013, Pages 19834-19839

Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires

(8) Xu, H Q a,c Xu, Guangwei a Huang, Shaoyun a Wang, Xiaoye b Yu, Bin a Zhang, Hui a Yang, Tao b Dai, Lun a

a PEKING UNIVERSITY (China)

b INSTITUTE OF SEMICONDUCTORS (China)

c LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE ENVIRONMENT; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NANOELECTRONIC DEVICES; PHOTOLUMINESCENCE SPECTRUM; TEMPERATURE DECREASE; TEMPERATURE DEPENDENCE; TRANSISTOR PERFORMANCE; ZINC-BLENDE STRUCTURES;

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HOLE MOBILITY; MOSFET DEVICES; NANOWIRES; PHOTOLUMINESCENCE; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 84886888853 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c3ra43127d Document Type: Article

Times cited : (15)

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