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Volumn 14, Issue 3, 2014, Pages 1214-1220

Controlled synthesis of phase-pure InAs nanowires on Si(111) by diminishing the diameter to 10 nm

Author keywords

InAs nanowire based FET; InAs nanowires; molecular beam epitaxy; pure phase

Indexed keywords

CATALYSTS; EPITAXIAL GROWTH; MOLECULAR BEAMS; MOSFET DEVICES; SILICON; SILVER; ZINC SULFIDE;

EID: 84896334118     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4040847     Document Type: Article
Times cited : (132)

References (50)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.