Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices

ACS Nano

Volumn 6, Issue 4, 2012, Pages 3624-3630

  Hou, Jared J ^a   Han, Ning ^a   Wang, Fengyun ^a   Xiu, Fei ^a   Yip, Senpo ^a   Hui, Alvin T ^a   Hung, Takfu ^a   Ho, Johnny C ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP MATERIALS; CONTACT PRINTING; CRYSTALLINITIES; ELECTRON MASS; ELECTRONIC BAND GAPS; ELECTRONIC DEVICE; FIELD-EFFECT MOBILITIES; HIGH CARRIER MOBILITY; HIGH ELECTRON MOBILITY; HIGH-FREQUENCY ELECTRONICS; HIGH-SPEED; INAS; NANOWIRE DEVICES; PARALLEL ARRAYS; STOICHIOMETRIC COMPOSITIONS; SURFACE COATINGS; TWO-STEP GROWTH;

AMORPHOUS SILICON; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ENERGY GAP; INDIUM ARSENIDE; SEMICONDUCTING INDIUM;

NANOWIRES;

ARSENIC; GALLIUM; INDIUM; NANOWIRE;

ARTICLE; CHEMISTRY; ELECTRICAL EQUIPMENT; METHODOLOGY; NANOTECHNOLOGY;

ARSENIC; ELECTRICAL EQUIPMENT AND SUPPLIES; GALLIUM; INDIUM; NANOTECHNOLOGY; NANOWIRES;

EID: 84860387802     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300966j     Document Type: Article

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