SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 40, 2014, Pages 6389-6400

Highly uniform trilayer molybdenum disulfide for wafer-scale device fabrication

(8) Tarasov, Alexey a Campbell, Philip M a Tsai, Meng Yen a Hesabi, Zohreh R a Feirer, Janine a Graham, Samuel b Ready, W Jud c Vogel, Eric M a

a Georgia Institute of Technology (United States)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

c GEORGIA TECH RESEARCH INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; IONIC LIQUIDS; LAYERED SEMICONDUCTORS; LITHOGRAPHY; MOLYBDENUM COMPOUNDS; NANOELECTRONICS; SEMICONDUCTING SILICON; SILICON OXIDES; SILICON WAFERS; THIN FILMS;

FIELD-EFFECT MOBILITIES; MOLYBDENUM DISULFIDE; PHYSICAL CHARACTERIZATION; SEMICONDUCTING MATERIALS; STRUCTURAL QUALITIES; TEMPERATURE DEPENDENT; TUNABLE BAND-GAP; WAFER-SCALE DEVICE FABRICATION;

FIELD EFFECT TRANSISTORS;

EID: 84918775440 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201401389 Document Type: Article

Times cited : (110)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.