Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Tarasov, A ^a   Fu, W ^a   Knopfmacher, O ^a   Brunner, J ^a   Calame, M ^a   Schonenberger C ^a  

^a UNIVERSITY OF BASEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT REGIONS; DETECTION LIMITS; FIELD-EFFECT SENSOR; GATE VOLTAGES; LOW-FREQUENCY NOISE; NANO SCALE; NANORIBBONS; NOISE CONTRIBUTIONS; ORDERS OF MAGNITUDE;

SENSORS;

SIGNAL TO NOISE RATIO;

EID: 78651308082     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3536674     Document Type: Article

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