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MRS Bulletin

Volumn 39, Issue 8, 2014, Pages 703-710

Phase change materials and phase change memory

(4) Raoux, Simone a Xiong, Feng b Wuttig, Matthias c Pop, Eric b

a HAHN MEITNER INSTITUT (Germany)

b Stanford University (United States)

c RWTH AACHEN UNIVERSITY (Germany)

Author keywords

crystallographic structure; electrical properties; phase transformation

Indexed keywords

COMPUTATION THEORY; COMPUTER ARCHITECTURE; ELECTRIC PROPERTIES; NANOCRYSTALLINE MATERIALS; PHASE CHANGE MEMORY; PHASE TRANSITIONS;

AMORPHOUS AND CRYSTALLINE PHASIS; CRYSTALLOGRAPHIC STRUCTURE; EMERGING MEMORY TECHNOLOGIES; EMERGING TECHNOLOGIES; EXTERNAL VOLTAGES; NEUROMORPHIC COMPUTING; PHASE CHANGE MEMORY (PCM); PHASE CHANGE PROCESS;

PHASE CHANGE MATERIALS;

EID: 84915785122 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/mrs.2014.139 Document Type: Article

Times cited : (465)

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