Crystallization properties of materials along the pseudo-binary line between GeTe and Sb

Journal of Applied Physics

Volumn 115, Issue 9, 2014, Pages

  Cheng, Huai Yu ^a   Raoux, Simone ^b   Jordan Sweet, Jean L ^b  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; DIGITAL STORAGE; GERMANIUM COMPOUNDS; NANOCRYSTALLINE MATERIALS; POLYPROPYLENES; TELLURIUM COMPOUNDS; THERMODYNAMIC STABILITY;

AMORPHOUS PHASE; BONDING PROPERTY; CRYSTALLINE PHASE; CRYSTALLIZATION PROPERTIES; CRYSTALLIZATION TEMPERATURE; DEVICE PERFORMANCE; LOW RESET CURRENTS; STORAGE-CLASS MEMORY;

PHASE CHANGE MATERIALS;

EID: 84896777448     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4867045     Document Type: Article

References (20)

1. R. F. Freitas and W. W. Wilcke, IBM J. Res. Dev. 52, 439 (2008). 10.1147/rd.524.0439
2. A. Bivens, P. Dube, M. Franceschini, J. Karidis, L. Lastras, and M. Tsao, in Proceedings of IEEE International. Memory Workshop (2010), p. 1.
3. A. L. Lacaita and A. Redaelli, Microelectron. Eng. 109, 351 (2013). 10.1016/j.mee.2013.02.105
4. P. K. Khulbe, T. Hurst, M. Horie, and M. Mansuripur, Appl. Opt. 41, 6220 (2002). 10.1364/AO.41.006220
5. L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, J. Appl. Phys. 97, 083520 (2005). 10.1063/1.1868860
6. M. Boniardi, D. Ielmini, I. Tortorelli, A. Redaelli, A. Pirovano, M. Allegra, M. Magistretti, C. Bresolin, D. Erbetta, A. Modelli, E. Varesi, F. Pellizzer, A. L. Lacita, and R. Bez, Solid-State Electron. 58, 11 (2011). 10.1016/j.sse.2010.11.033
7. I. S. Kim, S. L. Cho, D. H. Im, E. H. Cho, D. H. Kim, G. H. Oh, D. H. Ahn, S. O. Park, S. W. Nam, J. T. Moon, and C. H. Chung, VLSI Technology (VLSIT), 2010 Symposium, p. 203.
8. H. Y. Cheng, S. Raoux, and J. L. Jordan-Sweet, Appl. Phys. Lett. 98, 121911 (2011). 10.1063/1.3570636
9. H. Y. Cheng, K. F. Kao, C. M. Lee, and T. S. Chin, IEEE Trans. Magn. 43, 927 (2007). 10.1109/TMAG.2006.888516
10. M. H. B. Stiddard, J. Mater. Sci. Lett. 4, 1157 (1985). 10.1007/BF00720441
11. K. Shportko, S. Kremers, M. Woda, D. Lencer, J. Robertson, and M. Wuttig, Nature Mater. 7, 653 (2008). 10.1038/nmat2226
12. S. M. Yoon, K. J. Choi, N. Y. Lee, S. Y. Lee, Y. S. Park, and B. G. Yu, Jpn. J. Appl. Phys., Part 1 46, 7225 (2007). 10.1143/JJAP.46.7225
13. S. O. Ryu, J. Electron. Mater. 37, 535 (2008). 10.1007/s11664-007-0377-0
14. S. Raoux, H. Y. Cheng, M. A. Caldwell, and H. -S. P. Wong, Appl. Phys. Lett. 95, 071910 (2009). 10.1063/1.3212732
15. G. Bruns, P. Merkelbach, C. Schlockermann, M. Salinga, M. Wuttig, T. D. Happ, J. B. Philipp, and M. Kund, Appl. Phys. Lett. 95, 043108 (2009). 10.1063/1.3191670
16. H. Y. Cheng, S. Raoux, M. Wuttig, B. Munoz, and J. L. Jordan-Sweet, The Crystallization Behavior of Ge1SbxTe1 Phase-change Materials (Mater. Res. Soc. Spring Meet., San Francisco, 2010), p. H-6.
17. H. Y. Cheng, S. Raoux, S. Kim, M. BrightSky, R. Cheek, H. L. Lung, and C. Lam, in Proceedings of the European Phase Change and Ovonic Science Symposium, Berlin, Germany, 2013.
18. S. Raoux, B. Muñoz, H. Y. Cheng, and J. L. Jordan-Sweet, Appl. Phys. Lett. 95, 143118 (2009). 10.1063/1.3236786
19. M. Chen, K. A. Rubin, and R. W. Barton, Appl. Phys. Lett. 49, 502 (1986). 10.1063/1.97617
20. D. Lencer, M. Salinga, B. Grabowski, T. Hickel, J. Neugebauer, and M. Wuttig, Nature Mater. 7, 972 (2008). 10.1038/nmat2330