Minimum voltage for threshold switching in nanoscale Phase-change memory

Nano Letters

Volumn 8, Issue 10, 2008, Pages 3429-3433

  Yu, D Dong ^a   Brittman, Sarah ^a   Lee, Jin Seok ^a   Falk, Abram L ^b   Hongkun, Park ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS-TO-CRYSTALLINE TRANSITIONS; CARRIER MULTIPLICATIONS; CONSTANT VOLTAGES; DOMAIN LENGTHS; IN-PHASE; INELASTIC SCATTERING PROCESS; NANO-METER SCALE; NANO-SCALE; PHASE-CHANGE MEMORIES; PLANAR DEVICES; SCALING LAW; SIZE SCALING; THRESHOLD SWITCHING;

ELECTRIC WIRE; PHASE TRANSITIONS; PULSE CODE MODULATION; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 61849099950     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802261s     Document Type: Article

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