Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Navarro, G ^a   Coue M ^a   Kiouseloglou, A ^a   Noe P ^a   Fillot, F ^a   Delaye, V ^a   Persico, A ^a   Roule, A ^a   Bernard, M ^a   Sabbione, C ^a   Blachier, D ^a   Sousa, V ^a   Perniola, L ^a   Maitrejean, S ^a   Cabrini, A ^b   Torelli, G ^b   Zuliani, P ^c   Annunziata, R ^c   Palumbo, E ^c   Borghi, M ^c   Reimbold, G ^a   De Salvo, B ^a   more..

^a CEA GRENOBLE   (France)

^b UNIVERSITY OF PAVIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894341179     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724678     Document Type: Conference Paper

References (7)

1. H.Y. Cheng et al., "A thermally robust phase change memory by engineering the Ge/N concentration in (Ge,N)xSbyTez phase change material," IEEE International Electron Devices Meeting (IEDM) 2012, pp.31.1.1-4, Dec. 2012.
2. G. Servalli, "A 45nm generation Phase Change Memory technology," IEEE International Electron Devices Meeting (IEDM) 2009, pp.1-4, Dec. 2009.
3. W. Czubatyj et al. "Nanocomposite Phase-Change Memory alloys for very high temperature data retention," IEEE Electron Device Letters, vol.31, no.8, pp.869-871, Aug. 2010.
4. M. Boniardi et al. "Statistics of resistance drift due to structural relaxation in Phase-Change Memory arrays," IEEE Transactions on Electron Devices, vol.57, no.10, pp.2690-2696, Oct. 2010.
5. D. Ielmini et al. "Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation," IEEE International Electron Devices Meeting (IEDM) 2007, pp.939-942, Dec. 2007.
6. Jing Li et al. "Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials," IEEE International Electron Devices Meeting (IEDM) 2011, pp.12.5.1-4, Dec. 2011.
7. SangBum Kim et al. "One-dimensional thickness scaling study of phase change material Ge2Sb2Te5 using a pseudo 3-terminal device," IEEE Transactions on Electron Devices, vol.58, no.5, pp.1483-1489, May 2011.