Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling

Nanotechnology

Volumn 23, Issue 20, 2012, Pages

  Lee, Jaeho ^a   Asheghi, Mehdi ^a   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL TEMPERATURE; COUPLED TRANSPORT; CRITICAL PARTS; DESIGN STRATEGIES; DEVICE PERFORMANCE; ELECTRICAL CURRENT; ELECTRO-THERMAL SIMULATION; ELECTRODE CONTACTS; ELECTRODE INTERFACE; FIGURES OF MERITS; MEMORY PERFORMANCE; PELTIER HEATING; PHASE CHANGES; PROGRAMMING CURRENTS; REPRESENTATIVE VALUES; THERMAL CONFINEMENT; THERMOELECTRIC TRANSPORT; THOMSON;

INTERFACES (MATERIALS);

PHASE CHANGE MEMORY;

NANOPARTICLE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD; ENERGY TRANSFER; HEAT; HEATING; METHODOLOGY; PHASE TRANSITION; RADIATION EXPOSURE;

COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; ENERGY TRANSFER; HEATING; HOT TEMPERATURE; MODELS, CHEMICAL; NANOPARTICLES; PHASE TRANSITION;

EID: 84860516656     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/20/205201     Document Type: Article

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